Abstract
Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics. Energy and angular distributions of unreacted F atoms suggest significant multiple-bounce scattering in addition to single-bounce scattering and trapping desorption. An empirical model of the atom-surface interaction dynamics is used in a Monte Carlo simulation of topography evolution during neutral beam etching of Si. Model predictions of profile phenomena are validated by experiments.
Original language | English |
---|---|
Pages (from-to) | 3049-3052 |
Number of pages | 4 |
Journal | Physical Review Letters |
Volume | 77 |
Issue number | 14 |
DOIs | |
State | Published - 1996 |