Gas-surface dynamics and profile evolution during etching of silicon

G. S. Hwang, C. M. Anderson, M. J. Gordon, T. A. Moore, T. K. Minton, K. P. Giapis

Research output: Contribution to journalArticlepeer-review

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Scattering of energetic F atoms on a fluorinated Si surface is studied by molecular beam methods. The energy transfer closely follows hard-sphere collision kinematics. Energy and angular distributions of unreacted F atoms suggest significant multiple-bounce scattering in addition to single-bounce scattering and trapping desorption. An empirical model of the atom-surface interaction dynamics is used in a Monte Carlo simulation of topography evolution during neutral beam etching of Si. Model predictions of profile phenomena are validated by experiments.

Original languageEnglish
Pages (from-to)3049-3052
Number of pages4
JournalPhysical Review Letters
Issue number14
StatePublished - 1996


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