GaN microstructure light-emitting diodes directly fabricated on tungsten-metal electrodes using a micro-patterned graphene interlayer

Kunook Chung, Keundong Lee, Youngbin Tchoe, Hongseok Oh, Jun Beom Park, Jerome K. Hyun, Gyu Chul Yi

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We report on the selective-area growth of GaN microstructures on tungsten (W)-metal electrodes using a micro-patterned graphene intermediate layer between GaN and W, and demonstrate their use as light-emitting diodes (LEDs). Prior to the GaN growths, the cm-scale graphene layer was transferred on W and then further patterned into a regular array of few-μm-sized graphene microdots using conventional lithography. The graphene microdots served as a seed layer for selectively growing crack-free GaN microstructures with regular diameter and spacing. Each microstructure displayed a microdisk morphology, exhibiting a single crystalline phase from epitaxial lateral overgrowth (ELOG). We observed ohmic behavior between the as-grown GaN microdisks and underlying W film, facilitating the fabrication of LED microarrays. Using the underlying W layer as an ohmic contact, we fabricated p-n junction GaN microdisk LEDs, consisting of three periods of In x Ga 1–x N/GaN multiple quantum wells. Uniform electroluminescence was observed across the microdisks. These results open up novel strategies for streamlined fabrication of high-performance and high-resolution LEDs.

Original languageEnglish
Pages (from-to)82-86
Number of pages5
JournalNano Energy
Volume60
DOIs
StatePublished - Jun 2019

Keywords

  • Epitaxial lateral overgrowth
  • Gallium nitride microstructure
  • Graphene
  • Light-emitting diode arrays
  • Metal electrode substrate

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