GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime

Ki Sik Im; Jae Hwa Seo; Young Jun Yoon; Young In Jang; Jin Su Kim; Seongjae Cho; Jae Hoon Lee; Sorin Cristoloveanu; Jung Hee Lee; In Man Kang

doi:10.7567/JJAP.53.118001

GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime

Ki Sik Im, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Jin Su Kim, Seongjae Cho, Jae Hoon Lee, Sorin Cristoloveanu, Jung Hee Lee, In Man Kang

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Radio-frequency (RF) performances of a gallium nitride (GaN)-based junctionless (JL) trigate field-effect transistor (TGFET), or fin-shaped FET (FinFET), are demonstrated along with RF modeling for the first time. The fabricated GaN JL TGFET had a gate length of 350 nm and had no AlGaN/GaN heterojunction on which conventional high-mobility electron transistors (HEMTs) had been based to have a fully junctionless channel. The device with five fin channels exhibits a maximum drain current of 403 mA/mm and maximum transconductance of 123.6 mS/mm. The maximum cutoff frequency (f_T) and maximum oscillation frequency (f_max) are 2.45 and 9.75 GHz, respectively. In order to confirm its potential for high-frequency applications, small-signal modeling has been carried out up to a frequency above the maximum f_T.

Original language	English
Article number	118001
Journal	Japanese Journal of Applied Physics
Volume	53
Issue number	11
DOIs	https://doi.org/10.7567/JJAP.53.118001
State	Published - 1 Nov 2014

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© 2014 The Japan Society of Applied Physics.

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@article{d703eeec5fc6489d8d9eac5e5e788751,

title = "GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime",

abstract = "Radio-frequency (RF) performances of a gallium nitride (GaN)-based junctionless (JL) trigate field-effect transistor (TGFET), or fin-shaped FET (FinFET), are demonstrated along with RF modeling for the first time. The fabricated GaN JL TGFET had a gate length of 350 nm and had no AlGaN/GaN heterojunction on which conventional high-mobility electron transistors (HEMTs) had been based to have a fully junctionless channel. The device with five fin channels exhibits a maximum drain current of 403 mA/mm and maximum transconductance of 123.6 mS/mm. The maximum cutoff frequency (fT) and maximum oscillation frequency (fmax) are 2.45 and 9.75 GHz, respectively. In order to confirm its potential for high-frequency applications, small-signal modeling has been carried out up to a frequency above the maximum fT.",

author = "Im, {Ki Sik} and Seo, {Jae Hwa} and Yoon, {Young Jun} and Jang, {Young In} and Kim, {Jin Su} and Seongjae Cho and Lee, {Jae Hoon} and Sorin Cristoloveanu and Lee, {Jung Hee} and Kang, {In Man}",

note = "Publisher Copyright: {\textcopyright} 2014 The Japan Society of Applied Physics.",

year = "2014",

month = nov,

day = "1",

doi = "10.7567/JJAP.53.118001",

language = "English",

volume = "53",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

number = "11",

}

TY - JOUR

T1 - GaN junctionless trigate field-effect transistor with deep-submicron gate length

T2 - Characterization and modeling in RF regime

AU - Im, Ki Sik

AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Jang, Young In

AU - Kim, Jin Su

AU - Cho, Seongjae

AU - Lee, Jae Hoon

AU - Cristoloveanu, Sorin

AU - Lee, Jung Hee

AU - Kang, In Man

PY - 2014/11/1

Y1 - 2014/11/1

N2 - Radio-frequency (RF) performances of a gallium nitride (GaN)-based junctionless (JL) trigate field-effect transistor (TGFET), or fin-shaped FET (FinFET), are demonstrated along with RF modeling for the first time. The fabricated GaN JL TGFET had a gate length of 350 nm and had no AlGaN/GaN heterojunction on which conventional high-mobility electron transistors (HEMTs) had been based to have a fully junctionless channel. The device with five fin channels exhibits a maximum drain current of 403 mA/mm and maximum transconductance of 123.6 mS/mm. The maximum cutoff frequency (fT) and maximum oscillation frequency (fmax) are 2.45 and 9.75 GHz, respectively. In order to confirm its potential for high-frequency applications, small-signal modeling has been carried out up to a frequency above the maximum fT.

AB - Radio-frequency (RF) performances of a gallium nitride (GaN)-based junctionless (JL) trigate field-effect transistor (TGFET), or fin-shaped FET (FinFET), are demonstrated along with RF modeling for the first time. The fabricated GaN JL TGFET had a gate length of 350 nm and had no AlGaN/GaN heterojunction on which conventional high-mobility electron transistors (HEMTs) had been based to have a fully junctionless channel. The device with five fin channels exhibits a maximum drain current of 403 mA/mm and maximum transconductance of 123.6 mS/mm. The maximum cutoff frequency (fT) and maximum oscillation frequency (fmax) are 2.45 and 9.75 GHz, respectively. In order to confirm its potential for high-frequency applications, small-signal modeling has been carried out up to a frequency above the maximum fT.

UR - http://www.scopus.com/inward/record.url?scp=84909942444&partnerID=8YFLogxK

U2 - 10.7567/JJAP.53.118001

DO - 10.7567/JJAP.53.118001

M3 - Article

AN - SCOPUS:84909942444

SN - 0021-4922

VL - 53

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 11

M1 - 118001

ER -

GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime

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