GaN junctionless trigate field-effect transistor with deep-submicron gate length: Characterization and modeling in RF regime

Ki Sik Im, Jae Hwa Seo, Young Jun Yoon, Young In Jang, Jin Su Kim, Seongjae Cho, Jae Hoon Lee, Sorin Cristoloveanu, Jung Hee Lee, In Man Kang

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9 Scopus citations

Abstract

Radio-frequency (RF) performances of a gallium nitride (GaN)-based junctionless (JL) trigate field-effect transistor (TGFET), or fin-shaped FET (FinFET), are demonstrated along with RF modeling for the first time. The fabricated GaN JL TGFET had a gate length of 350 nm and had no AlGaN/GaN heterojunction on which conventional high-mobility electron transistors (HEMTs) had been based to have a fully junctionless channel. The device with five fin channels exhibits a maximum drain current of 403 mA/mm and maximum transconductance of 123.6 mS/mm. The maximum cutoff frequency (fT) and maximum oscillation frequency (fmax) are 2.45 and 9.75 GHz, respectively. In order to confirm its potential for high-frequency applications, small-signal modeling has been carried out up to a frequency above the maximum fT.

Original languageEnglish
Article number118001
JournalJapanese Journal of Applied Physics
Volume53
Issue number11
DOIs
StatePublished - 1 Nov 2014

Bibliographical note

Publisher Copyright:
© 2014 The Japan Society of Applied Physics.

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