Abstract
This review presents a comparative analysis of the analog switching performance of oxide- and two-dimensional (2D)-material-based memristors, focusing on their application in neuromorphic computing systems. This study examines various performance metrics such as endurance, energy consumption, and switching characteristics to elucidate how these parameters are influenced by the unique characteristics of the respective materials. By examining both oxide- and 2D-material-based memristors in array configurations, this review provides insights into their suitability for neuromorphic computing, highlighting advancements, challenges, and future research directions in memristor technology.
| Original language | English |
|---|---|
| Pages (from-to) | 3998-4015 |
| Number of pages | 18 |
| Journal | ACS Applied Electronic Materials |
| Volume | 6 |
| Issue number | 6 |
| DOIs | |
| State | Published - 25 Jun 2024 |
Bibliographical note
Publisher Copyright:© 2024 American Chemical Society.
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
Keywords
- 2D-material-based memristors
- Analog switching
- Memristors
- Neuromorphic computing
- Oxide-based memristors
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