Free-standing and ultrathin inorganic light-emitting diode array

Youngbin Tchoe, Kunook Chung, Keundong Lee, Janghyun Jo, Kyungmin Chung, Jerome K. Hyun, Miyoung Kim, Gyu Chul Yi

Research output: Contribution to journalArticlepeer-review

15 Scopus citations


We report on the fabrication and characteristics of an individually addressable gallium nitride (GaN) microdisk light-emitting diode (LED) array in free-standing and ultrathin form. A high-quality GaN microdisk array with n-GaN, InGaN/GaN quantum wells and p-GaN layers was epitaxially grown on graphene microdots patterned on SiO2/Si substrates. Due to the weak attachment of the graphene microdots to the growth substrate, a microdisk array coated with a polyimide layer was easily separated from the substrate using mechanical or chemical methods to form an ultrathin free-standing film. Individually addressable microdisk LEDs were created by forming thin metal contacts on the p-GaN and n-GaN surfaces in a crossbar configuration. Each microdisk LED that comprised an ultrahigh resolution array of 2500 pixels per inch was found to be uniquely addressable. The devices in free-standing form exhibited stable electrical and optoelectronic characteristics under extreme bending conditions and continuous operation mode despite the absence of a heat dissipating substrate. These results present promising approaches for the fabrication of high-quality inorganic semiconductor devices for ultrahigh resolution and high-performance flexible applications.

Original languageEnglish
Article number37
JournalNPG Asia Materials
Issue number1
StatePublished - 1 Dec 2019

Bibliographical note

Funding Information:
This work was financially supported by the Samsung Research Funding Center of Samsung Electronics (SRFC-TA1803-02(0417-20180116)).

Publisher Copyright:
© 2019, The Author(s).


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