Forming-free one-selector/one-resistor characteristics of oxygen-rich ITO based transparent resistive switching memory via defect engineering using reactive sputtering process

Min Ju Yun; Kyeong Heon Kim; Sungho Kim; Hee-Dong Kim

Forming-free one-selector/one-resistor characteristics of oxygen-rich ITO based transparent resistive switching memory via defect engineering using reactive sputtering process

Min Ju Yun
, Kyeong Heon Kim
, Sungho Kim
, Hee-Dong Kim

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	5947-5952
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	18
State	Published - 2018

Cite this

@article{ee6785d613bb48188a32500005f61508,

title = "Forming-free one-selector/one-resistor characteristics of oxygen-rich ITO based transparent resistive switching memory via defect engineering using reactive sputtering process",

author = "Yun, \{Min Ju\} and Kim, \{Kyeong Heon\} and Sungho Kim and Hee-Dong Kim",

year = "2018",

language = "English",

volume = "18",

pages = "5947--5952",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

}

Forming-free one-selector/one-resistor characteristics of oxygen-rich ITO based transparent resistive switching memory via defect engineering using reactive sputtering process. / Yun, Min Ju; Kim, Kyeong Heon; Kim, Sungho et al.
In: Journal of Nanoscience and Nanotechnology, Vol. 18, 2018, p. 5947-5952.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Forming-free one-selector/one-resistor characteristics of oxygen-rich ITO based transparent resistive switching memory via defect engineering using reactive sputtering process

AU - Yun, Min Ju

AU - Kim, Kyeong Heon

AU - Kim, Sungho

AU - Kim, Hee-Dong

PY - 2018

Y1 - 2018

M3 - Article

SN - 1533-4880

VL - 18

SP - 5947

EP - 5952

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

ER -