| Original language | English |
|---|---|
| Pages (from-to) | 5947-5952 |
| Number of pages | 6 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 18 |
| State | Published - 2018 |
Forming-free one-selector/one-resistor characteristics of oxygen-rich ITO based transparent resistive switching memory via defect engineering using reactive sputtering process
Min Ju Yun, Kyeong Heon Kim, Sungho Kim, Hee-Dong Kim
Research output: Contribution to journal › Article › peer-review