Formation, nature, and stability of the arsenic-silicon-oxygen alloy for plasma doping of non-planar silicon structures

Peter L.G. Ventzek, Kyoung E. Kweon, Hirokazu Ueda, Masahiro Oka, Yasuhiro Sugimoto, Gyeong S. Hwang

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We demonstrate stable arsenic-silicon-oxide film formation during plasma doping of arsenic into non-planar silicon surfaces through investigation of the nature and stability of the ternary oxide using first principles calculations with experimental validations. It is found that arsenic can be co-mingled with silicon and oxygen, while the ternary oxide exhibits the minimum energy phase at x ≈ 0.3 in AsxSi1-xO2-0.5x. Our calculations also predict that the arsenic-silicon-oxide alloy may undergo separation into As-O, Si-rich As-Si-O, and Si-O phases depending on the composition ratio, consistent with experimental observations. This work highlights the importance of the solid-state chemistry for controlled plasma doping.

Original languageEnglish
Article number262102
JournalApplied Physics Letters
Volume105
Issue number26
DOIs
StatePublished - 29 Dec 2014

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