Flexible kesterite thin-film solar cells under stress

Ha Kyung Park; Yunae Cho; Juran Kim; Sammi Kim; Sungjun Kim; Jeha Kim; Kee Jeong Yang; Dae Hwan Kim; Jin Kyu Kang; William Jo

doi:10.1038/s41528-022-00221-4

Flexible kesterite thin-film solar cells under stress

Ha Kyung Park, Yunae Cho, Juran Kim, Sammi Kim, Sungjun Kim, Jeha Kim, Kee Jeong Yang, Dae Hwan Kim, Jin Kyu Kang, William Jo

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces. Here, we investigated the electronic band structure and carrier transport mechanism of Cu₂ZnSn(S,Se)₄ (CZTSSe) photovoltaic devices under mechanical stress. Highly efficient flexible CZTSSe devices were fabricated controlling the Na incorporation. The electronic structure of CZTSSe was deformed with stress as the band gap, valence band edge, and work function changed. Electrical properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without Na. The local open-circuit voltage (V_OC) on the bent CZTSSe surface decreased due to limited carrier excitation. The reduction of local V_OC occurred larger with convex bending than in concave bending, which is consistent with the degradation of device parameters. This study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.

Original language	English
Article number	91
Journal	npj Flexible Electronics
Volume	6
Issue number	1
DOIs	https://doi.org/10.1038/s41528-022-00221-4
State	Published - Dec 2022

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@article{c3b068a84fb045be9fb25e8608eaba2d,

title = "Flexible kesterite thin-film solar cells under stress",

abstract = "Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces. Here, we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic devices under mechanical stress. Highly efficient flexible CZTSSe devices were fabricated controlling the Na incorporation. The electronic structure of CZTSSe was deformed with stress as the band gap, valence band edge, and work function changed. Electrical properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without Na. The local open-circuit voltage (VOC) on the bent CZTSSe surface decreased due to limited carrier excitation. The reduction of local VOC occurred larger with convex bending than in concave bending, which is consistent with the degradation of device parameters. This study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.",

author = "Park, {Ha Kyung} and Yunae Cho and Juran Kim and Sammi Kim and Sungjun Kim and Jeha Kim and Yang, {Kee Jeong} and Kim, {Dae Hwan} and Kang, {Jin Kyu} and William Jo",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2018R1A6A1A03025340) and Ministry of Science, Technology, ICT, and Future Planning (NRF-2021R1A2B5B02001961). This research was supported by the program of Phased development of carbon neutral technologies through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT (NRF-2022M3J1A1064229). Additionally, this work was supported by the DGIST R&D programs of the Ministry of Science and ICT (22-CoE-ET-01). The first author, H.K. Park, is also grateful for the financial support received from the Hyundai Motor Chung Mong-Koo Foundation. Publisher Copyright: {\textcopyright} 2022, The Author(s).",

year = "2022",

month = dec,

doi = "10.1038/s41528-022-00221-4",

language = "English",

volume = "6",

journal = "npj Flexible Electronics",

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T1 - Flexible kesterite thin-film solar cells under stress

AU - Park, Ha Kyung

AU - Cho, Yunae

AU - Kim, Juran

AU - Kim, Sammi

AU - Kim, Sungjun

AU - Kim, Jeha

AU - Yang, Kee Jeong

AU - Kim, Dae Hwan

AU - Kang, Jin Kyu

AU - Jo, William

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education (NRF-2018R1A6A1A03025340) and Ministry of Science, Technology, ICT, and Future Planning (NRF-2021R1A2B5B02001961). This research was supported by the program of Phased development of carbon neutral technologies through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT (NRF-2022M3J1A1064229). Additionally, this work was supported by the DGIST R&D programs of the Ministry of Science and ICT (22-CoE-ET-01). The first author, H.K. Park, is also grateful for the financial support received from the Hyundai Motor Chung Mong-Koo Foundation. Publisher Copyright: © 2022, The Author(s).

PY - 2022/12

Y1 - 2022/12

N2 - Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces. Here, we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic devices under mechanical stress. Highly efficient flexible CZTSSe devices were fabricated controlling the Na incorporation. The electronic structure of CZTSSe was deformed with stress as the band gap, valence band edge, and work function changed. Electrical properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without Na. The local open-circuit voltage (VOC) on the bent CZTSSe surface decreased due to limited carrier excitation. The reduction of local VOC occurred larger with convex bending than in concave bending, which is consistent with the degradation of device parameters. This study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.

AB - Understanding the stress-induced phenomena is essential for improving the long-term application of flexible solar cells to non-flat surfaces. Here, we investigated the electronic band structure and carrier transport mechanism of Cu2ZnSn(S,Se)4 (CZTSSe) photovoltaic devices under mechanical stress. Highly efficient flexible CZTSSe devices were fabricated controlling the Na incorporation. The electronic structure of CZTSSe was deformed with stress as the band gap, valence band edge, and work function changed. Electrical properties of the bent CZTSSe surface were probed by Kelvin probe force microscopy and the CZTSSe with Na showed less degraded carrier transport compared to the CZTSSe without Na. The local open-circuit voltage (VOC) on the bent CZTSSe surface decreased due to limited carrier excitation. The reduction of local VOC occurred larger with convex bending than in concave bending, which is consistent with the degradation of device parameters. This study paves the way for understanding the stress-induced optoelectronic changes in flexible photovoltaic devices.

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U2 - 10.1038/s41528-022-00221-4

DO - 10.1038/s41528-022-00221-4

M3 - Article

AN - SCOPUS:85140980487

SN - 2397-4621

VL - 6

JO - npj Flexible Electronics

JF - npj Flexible Electronics

IS - 1

M1 - 91

ER -

Flexible kesterite thin-film solar cells under stress

Abstract

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