First-principle study for more accurate optical and electrical characterization of Ge_1-xSn_x alloy for si and group-iv device applications

Material Science

• Carrier Mobility 100%
• Semiconductor Material 100%
• Electronic Circuit 50%
• Electronic Band Structure 50%
• Tensile Strain 50%
• Thermal Expansion 50%
• Ab Initio Calculation 50%
• III-V Semiconductor 50%
• Hole Mobility 50%
• Energy Levels 50%
• Mechanical Stress 50%

Engineering

• Band Gap 100%
• Sn Content 37%
• Band Structure 25%
• Carrier Mobility 25%
• Semiconductor Material 25%
• Optical Interconnect 12%
• Optical Performance 12%
• Mechanical Stress 12%
• Increasing Demand 12%
• Electrical Performance 12%
• Compound Semiconductor 12%
• Energy Band 12%
• Tensile Strain 12%
• Plane Wave 12%
• Transition Point 12%
• Local Minimum 12%
• Electronic State 12%
• Energy Levels 12%
• Integrated Circuit 12%
• Expansion Coefficient 12%
• Optical Source 12%