Fin flash memory cells with separated double gates

Jang Gn Yun; Yoon Kim; Il Han Park; Seongjae Cho; Jung Hoon Lee; Doo Hyun Kim; Gil Sung Lee; Dong Hua Lee; Se Hwan Park; Wonbo Shim Jong Duk Lee; Byung Gook Park

doi:10.1109/ISDRS.2007.4422287

Fin flash memory cells with separated double gates

Jang Gn Yun, Yoon Kim, Il Han Park, Seongjae Cho, Jung Hoon Lee, Doo Hyun Kim, Gil Sung Lee, Dong Hua Lee, Se Hwan Park, Wonbo Shim Jong Duk Lee, Byung Gook Park

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2007 International Semiconductor Device Research Symposium, ISDRS
DOIs	https://doi.org/10.1109/ISDRS.2007.4422287
State	Published - 2007
Event	2007 International Semiconductor Device Research Symposium, ISDRS - College Park, MD, United States Duration: 12 Dec 2007 → 14 Dec 2007

Publication series

Name	2007 International Semiconductor Device Research Symposium, ISDRS

Conference

Conference	2007 International Semiconductor Device Research Symposium, ISDRS
Country/Territory	United States
City	College Park, MD
Period	12/12/07 → 14/12/07

Access to Document

10.1109/ISDRS.2007.4422287

Cite this

Yun, J. G., Kim, Y., Park, I. H., Cho, S., Lee, J. H., Kim, D. H., Lee, G. S., Lee, D. H., Park, S. H., Lee, W. S. J. D., & Park, B. G. (2007). Fin flash memory cells with separated double gates. In 2007 International Semiconductor Device Research Symposium, ISDRS Article 4422287 (2007 International Semiconductor Device Research Symposium, ISDRS). https://doi.org/10.1109/ISDRS.2007.4422287

@inproceedings{8e3d8a5870fb483d91b885b835903d75,

title = "Fin flash memory cells with separated double gates",

author = "Yun, {Jang Gn} and Yoon Kim and Park, {Il Han} and Seongjae Cho and Lee, {Jung Hoon} and Kim, {Doo Hyun} and Lee, {Gil Sung} and Lee, {Dong Hua} and Park, {Se Hwan} and Lee, {Wonbo Shim Jong Duk} and Park, {Byung Gook}",

year = "2007",

doi = "10.1109/ISDRS.2007.4422287",

language = "English",

isbn = "1424418917",

series = "2007 International Semiconductor Device Research Symposium, ISDRS",

booktitle = "2007 International Semiconductor Device Research Symposium, ISDRS",

note = "2007 International Semiconductor Device Research Symposium, ISDRS ; Conference date: 12-12-2007 Through 14-12-2007",

}

Yun, JG, Kim, Y, Park, IH, Cho, S, Lee, JH, Kim, DH, Lee, GS, Lee, DH, Park, SH, Lee, WSJD & Park, BG 2007, Fin flash memory cells with separated double gates. in 2007 International Semiconductor Device Research Symposium, ISDRS., 4422287, 2007 International Semiconductor Device Research Symposium, ISDRS, 2007 International Semiconductor Device Research Symposium, ISDRS, College Park, MD, United States, 12/12/07. https://doi.org/10.1109/ISDRS.2007.4422287

TY - GEN

T1 - Fin flash memory cells with separated double gates

AU - Yun, Jang Gn

AU - Kim, Yoon

AU - Park, Il Han

AU - Cho, Seongjae

AU - Lee, Jung Hoon

AU - Kim, Doo Hyun

AU - Lee, Gil Sung

AU - Lee, Dong Hua

AU - Park, Se Hwan

AU - Lee, Wonbo Shim Jong Duk

AU - Park, Byung Gook

PY - 2007

Y1 - 2007

UR - http://www.scopus.com/inward/record.url?scp=44949221287&partnerID=8YFLogxK

U2 - 10.1109/ISDRS.2007.4422287

DO - 10.1109/ISDRS.2007.4422287

M3 - Conference contribution

AN - SCOPUS:44949221287

SN - 1424418917

SN - 9781424418916

T3 - 2007 International Semiconductor Device Research Symposium, ISDRS

BT - 2007 International Semiconductor Device Research Symposium, ISDRS

T2 - 2007 International Semiconductor Device Research Symposium, ISDRS

Y2 - 12 December 2007 through 14 December 2007

ER -