Film thickness effect on the properties of interconnection between YBCO and SI for superconductor and semiconductor integration

Y. S. Jeong; J. H. Park; D. S. Eun; S. Y. Lee; C. H. Kim; T. S. Hahn; J. Y. Kim; I. S. Yang

doi:10.1016/S0964-1807(98)00047-7

Film thickness effect on the properties of interconnection between YBCO and SI for superconductor and semiconductor integration

Y. S. Jeong, J. H. Park, D. S. Eun, S. Y. Lee, C. H. Kim, T. S. Hahn, J. Y. Kim, I. S. Yang

Department of Physics

Research output: Contribution to journal › Article › peer-review

Abstract

YBa₂Cu₃O_7-δ (YBCO) films were grown on Si using a buffer layer of yttria-stabilized zirconia (YSZ) by pulsed laser deposition. Interconnections between the YBCO film and the Si substrate using Au have been fabricated by lithography. The YBCO films showed zero-resistance critical temperatures in the range of 80-85 K and were found to be grown in the c-axis orientation. The structural properties of the films of various thicknesses were analyzed by XRD, SEM and Raman spectroscopy. Because of very different thermal expansion coefficients of Si and YBCO, there is a tendency to crack formation for films. The crack formation interrupts the current flow and increases the normal state resistance of the films. The effect of cracks on the contact resistances between YBCO films of various thicknesses and Si substrates through Au interconnections is reported.

Original language	English
Pages (from-to)	353-356
Number of pages	4
Journal	Applied Superconductivity
Volume	5
Issue number	7-12
DOIs	https://doi.org/10.1016/S0964-1807(98)00047-7
State	Published - 1997

Bibliographical note

Funding Information:
This work was supported by Ministry of Education through Interuniversity Semiconductor Research Center (ISRC-96-E-4031) in Seoul National University.

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10.1016/S0964-1807(98)00047-7

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@article{2aa74e12f2af432c918c38e636ce918b,

title = "Film thickness effect on the properties of interconnection between YBCO and SI for superconductor and semiconductor integration",

abstract = "YBa2Cu3O7-δ (YBCO) films were grown on Si using a buffer layer of yttria-stabilized zirconia (YSZ) by pulsed laser deposition. Interconnections between the YBCO film and the Si substrate using Au have been fabricated by lithography. The YBCO films showed zero-resistance critical temperatures in the range of 80-85 K and were found to be grown in the c-axis orientation. The structural properties of the films of various thicknesses were analyzed by XRD, SEM and Raman spectroscopy. Because of very different thermal expansion coefficients of Si and YBCO, there is a tendency to crack formation for films. The crack formation interrupts the current flow and increases the normal state resistance of the films. The effect of cracks on the contact resistances between YBCO films of various thicknesses and Si substrates through Au interconnections is reported.",

author = "Jeong, {Y. S.} and Park, {J. H.} and Eun, {D. S.} and Lee, {S. Y.} and Kim, {C. H.} and Hahn, {T. S.} and Kim, {J. Y.} and Yang, {I. S.}",

note = "Funding Information: This work was supported by Ministry of Education through Interuniversity Semiconductor Research Center (ISRC-96-E-4031) in Seoul National University.",

year = "1997",

doi = "10.1016/S0964-1807(98)00047-7",

language = "English",

volume = "5",

pages = "353--356",

journal = "Applied Superconductivity",

issn = "0964-1807",

publisher = "Pergamon Press Ltd.",

number = "7-12",

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TY - JOUR

T1 - Film thickness effect on the properties of interconnection between YBCO and SI for superconductor and semiconductor integration

AU - Jeong, Y. S.

AU - Park, J. H.

AU - Eun, D. S.

AU - Lee, S. Y.

AU - Kim, C. H.

AU - Hahn, T. S.

AU - Kim, J. Y.

AU - Yang, I. S.

N1 - Funding Information: This work was supported by Ministry of Education through Interuniversity Semiconductor Research Center (ISRC-96-E-4031) in Seoul National University.

PY - 1997

Y1 - 1997

N2 - YBa2Cu3O7-δ (YBCO) films were grown on Si using a buffer layer of yttria-stabilized zirconia (YSZ) by pulsed laser deposition. Interconnections between the YBCO film and the Si substrate using Au have been fabricated by lithography. The YBCO films showed zero-resistance critical temperatures in the range of 80-85 K and were found to be grown in the c-axis orientation. The structural properties of the films of various thicknesses were analyzed by XRD, SEM and Raman spectroscopy. Because of very different thermal expansion coefficients of Si and YBCO, there is a tendency to crack formation for films. The crack formation interrupts the current flow and increases the normal state resistance of the films. The effect of cracks on the contact resistances between YBCO films of various thicknesses and Si substrates through Au interconnections is reported.

AB - YBa2Cu3O7-δ (YBCO) films were grown on Si using a buffer layer of yttria-stabilized zirconia (YSZ) by pulsed laser deposition. Interconnections between the YBCO film and the Si substrate using Au have been fabricated by lithography. The YBCO films showed zero-resistance critical temperatures in the range of 80-85 K and were found to be grown in the c-axis orientation. The structural properties of the films of various thicknesses were analyzed by XRD, SEM and Raman spectroscopy. Because of very different thermal expansion coefficients of Si and YBCO, there is a tendency to crack formation for films. The crack formation interrupts the current flow and increases the normal state resistance of the films. The effect of cracks on the contact resistances between YBCO films of various thicknesses and Si substrates through Au interconnections is reported.

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U2 - 10.1016/S0964-1807(98)00047-7

DO - 10.1016/S0964-1807(98)00047-7

M3 - Article

AN - SCOPUS:0031175302

SN - 0964-1807

VL - 5

SP - 353

EP - 356

JO - Applied Superconductivity

JF - Applied Superconductivity

IS - 7-12

ER -

Film thickness effect on the properties of interconnection between YBCO and SI for superconductor and semiconductor integration

Abstract

Bibliographical note

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