Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructure

Sharif Md. Sadaf; El Mostafa Bourim; Xinjun Liu; Sakeb Hasan Choudhury; Dong Wook Kim; Hyunsang Hwang

doi:10.1063/1.3694016

Ferroelectricity-induced resistive switching in Pb(Zr _0.52Ti _0.48)O ₃/Pr _0.7Ca _0.3MnO ₃/Nb-doped SrTiO ₃ epitaxial heterostructure

Sharif Md. Sadaf, El Mostafa Bourim, Xinjun Liu, Sakeb Hasan Choudhury, Dong Wook Kim, Hyunsang Hwang

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Abstract

We investigated the effect of a ferroelectric Pb(Zr _0.52Ti _0.48)O ₃ (PZT) thin film on the generation of resistive switching in a stacked Pr _0.7Ca _0.3MnO ₃ (PCMO)/Nb-doped SrTiO ₃ (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

Original language	English
Article number	113505
Journal	Applied Physics Letters
Volume	100
Issue number	11
DOIs	https://doi.org/10.1063/1.3694016
State	Published - 12 Mar 2012

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@article{9dd4e85bf8c94608a876c6b45a234645,

title = "Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructure",

abstract = "We investigated the effect of a ferroelectric Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film on the generation of resistive switching in a stacked Pr 0.7Ca 0.3MnO 3 (PCMO)/Nb-doped SrTiO 3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.",

author = "{Md. Sadaf}, Sharif and {Mostafa Bourim}, El and Xinjun Liu and {Hasan Choudhury}, Sakeb and Kim, {Dong Wook} and Hyunsang Hwang",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-001864) and by R&D Program of the Ministry of Knowledge Economy. The authors thank Alex Ignatiev (University of Houston) for his useful suggestions and comments about the work.",

year = "2012",

month = mar,

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doi = "10.1063/1.3694016",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructure

AU - Md. Sadaf, Sharif

AU - Mostafa Bourim, El

AU - Liu, Xinjun

AU - Hasan Choudhury, Sakeb

AU - Kim, Dong Wook

AU - Hwang, Hyunsang

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-001864) and by R&D Program of the Ministry of Knowledge Economy. The authors thank Alex Ignatiev (University of Houston) for his useful suggestions and comments about the work.

PY - 2012/3/12

Y1 - 2012/3/12

N2 - We investigated the effect of a ferroelectric Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film on the generation of resistive switching in a stacked Pr 0.7Ca 0.3MnO 3 (PCMO)/Nb-doped SrTiO 3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

AB - We investigated the effect of a ferroelectric Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film on the generation of resistive switching in a stacked Pr 0.7Ca 0.3MnO 3 (PCMO)/Nb-doped SrTiO 3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

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U2 - 10.1063/1.3694016

DO - 10.1063/1.3694016

M3 - Article

AN - SCOPUS:84859945417

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 113505

ER -

Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructure

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Ferroelectricity-induced resistive switching in Pb(Zr _0.52Ti _0.48)O ₃/Pr _0.7Ca _0.3MnO ₃/Nb-doped SrTiO ₃ epitaxial heterostructure