We investigated the effect of a ferroelectric Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film on the generation of resistive switching in a stacked Pr 0.7Ca 0.3MnO 3 (PCMO)/Nb-doped SrTiO 3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-001864) and by R&D Program of the Ministry of Knowledge Economy. The authors thank Alex Ignatiev (University of Houston) for his useful suggestions and comments about the work.