Ferroelectricity-induced resistive switching in Pb(Zr 0.52Ti 0.48)O 3/Pr 0.7Ca 0.3MnO 3/Nb-doped SrTiO 3 epitaxial heterostructure

Sharif Md. Sadaf, El Mostafa Bourim, Xinjun Liu, Sakeb Hasan Choudhury, Dong Wook Kim, Hyunsang Hwang

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Abstract

We investigated the effect of a ferroelectric Pb(Zr 0.52Ti 0.48)O 3 (PZT) thin film on the generation of resistive switching in a stacked Pr 0.7Ca 0.3MnO 3 (PCMO)/Nb-doped SrTiO 3 (Nb:STO) heterostructure forming a p-n junction. To promote the ferroelectric effect, the thin PZT active layer was deposited on an epitaxially grown p-type PCMO film on a lattice-matched n-type Nb:STO single crystal. It was concluded that the observed resistive switching behavior in the all-perovskite Pt/PZT/PCMO/Nb:STO heterostructure was related to the modulation of PCMO/Nb:STO p-n junction's depletion width, which was caused either by the PZT ferroelectric polarization field effect, the electrochemical drift of oxygen ions under an electric field, or both simultaneously.

Original languageEnglish
Article number113505
JournalApplied Physics Letters
Volume100
Issue number11
DOIs
StatePublished - 12 Mar 2012

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (No. 2011-001864) and by R&D Program of the Ministry of Knowledge Economy. The authors thank Alex Ignatiev (University of Houston) for his useful suggestions and comments about the work.

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