Abstract
The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the VG sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.
| Original language | English |
|---|---|
| Pages (from-to) | 10729-10736 |
| Number of pages | 8 |
| Journal | ACS Nano |
| Volume | 9 |
| Issue number | 11 |
| DOIs | |
| State | Published - 24 Nov 2015 |
Bibliographical note
Publisher Copyright:© 2015 American Chemical Society.
Keywords
- PMN-PT
- antihysteresis
- ferroelectric memory
- ferroelectric single-crystal
- graphene transistor