Ferroelectric Single-Crystal Gated Graphene/Hexagonal-BN/Ferroelectric Field-Effect Transistor

Nahee Park, Haeyong Kang, Jeongmin Park, Yourack Lee, Yoojoo Yun, Jeong Ho Lee, Sang Goo Lee, Young Hee Lee, Dongseok Suh

Research output: Contribution to journalArticlepeer-review

59 Scopus citations


The effect of a ferroelectric polarization field on the charge transport in a two-dimensional (2D) material was examined using a graphene monolayer on a hexagonal boron nitride (hBN) field-effect transistor (FET) fabricated using a ferroelectric single-crystal substrate, (1-x)[Pb(Mg1/3Nb2/3)O3]-x[PbTiO3] (PMN-PT). In this configuration, the intrinsic properties of graphene were preserved with the use of an hBN flake, and the influence of the polarization field from PMN-PT could be distinguished. During a wide-range gate-voltage (VG) sweep, a sharp inversion of the spontaneous polarization affected the graphene channel conductance asymmetrically as well as an antihysteretic behavior. Additionally, a transition from antihysteresis to normal ferroelectric hysteresis occurred, depending on the VG sweep range relative to the ferroelectric coercive field. We developed a model to interpret the complex coupling among antihysteresis, current saturation, and sudden conductance variation in relation with the ferroelectric switching and the polarization-assisted charge trapping, which can be generalized to explain the combination of 2D structured materials with ferroelectrics.

Original languageEnglish
Pages (from-to)10729-10736
Number of pages8
JournalACS Nano
Issue number11
StatePublished - 24 Nov 2015

Bibliographical note

Publisher Copyright:
© 2015 American Chemical Society.


  • PMN-PT
  • antihysteresis
  • ferroelectric memory
  • ferroelectric single-crystal
  • graphene transistor


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