Ferroelectric properties of vanadium-doped Bi 4Ti 3O 12 thin films deposited by a sol-gel method

S. S. Kim; T. K. Song; J. K. Kim; Jinheung Kim

doi:10.1063/1.1494840

Ferroelectric properties of vanadium-doped Bi ₄Ti ₃O ₁₂ thin films deposited by a sol-gel method

S. S. Kim, T. K. Song, J. K. Kim, Jinheung Kim

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

43 Scopus citations

Abstract

We report the enhancement of ferroelectric properties in vanadium-doped Bi ₄Ti ₃O ₁₂ (BIT) thin films deposited by a sol-gel method. Compared to the undoped BIT, V-doped BIT (BTV) showed higher polarizations and a better fatigue resistance as reported in ceramic systems recently [Noguchi et al., Appl. Phys. Lett. 78, 1903 (2001)]. BTV showed a remanent polarization (2P _r) of 15.9 μC/cm ², higher than the value for BIT, 12.5 μC/cm ². The polarization of the BTV thin film capacitor decreased by 19%, while that of the BIT decreased by 23% after the fatigue test with 4×10 ¹⁰ switching cycles.

Original language	English
Pages (from-to)	2213-2215
Number of pages	3
Journal	Journal of Applied Physics
Volume	92
Issue number	4
DOIs	https://doi.org/10.1063/1.1494840
State	Published - 15 Aug 2002

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title = "Ferroelectric properties of vanadium-doped Bi 4Ti 3O 12 thin films deposited by a sol-gel method",

abstract = "We report the enhancement of ferroelectric properties in vanadium-doped Bi 4Ti 3O 12 (BIT) thin films deposited by a sol-gel method. Compared to the undoped BIT, V-doped BIT (BTV) showed higher polarizations and a better fatigue resistance as reported in ceramic systems recently [Noguchi et al., Appl. Phys. Lett. 78, 1903 (2001)]. BTV showed a remanent polarization (2P r) of 15.9 μC/cm 2, higher than the value for BIT, 12.5 μC/cm 2. The polarization of the BTV thin film capacitor decreased by 19%, while that of the BIT decreased by 23% after the fatigue test with 4×10 10 switching cycles.",

author = "Kim, {S. S.} and Song, {T. K.} and Kim, {J. K.} and Jinheung Kim",

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AU - Kim, S. S.

AU - Song, T. K.

AU - Kim, J. K.

AU - Kim, Jinheung

PY - 2002/8/15

Y1 - 2002/8/15

N2 - We report the enhancement of ferroelectric properties in vanadium-doped Bi 4Ti 3O 12 (BIT) thin films deposited by a sol-gel method. Compared to the undoped BIT, V-doped BIT (BTV) showed higher polarizations and a better fatigue resistance as reported in ceramic systems recently [Noguchi et al., Appl. Phys. Lett. 78, 1903 (2001)]. BTV showed a remanent polarization (2P r) of 15.9 μC/cm 2, higher than the value for BIT, 12.5 μC/cm 2. The polarization of the BTV thin film capacitor decreased by 19%, while that of the BIT decreased by 23% after the fatigue test with 4×10 10 switching cycles.

AB - We report the enhancement of ferroelectric properties in vanadium-doped Bi 4Ti 3O 12 (BIT) thin films deposited by a sol-gel method. Compared to the undoped BIT, V-doped BIT (BTV) showed higher polarizations and a better fatigue resistance as reported in ceramic systems recently [Noguchi et al., Appl. Phys. Lett. 78, 1903 (2001)]. BTV showed a remanent polarization (2P r) of 15.9 μC/cm 2, higher than the value for BIT, 12.5 μC/cm 2. The polarization of the BTV thin film capacitor decreased by 19%, while that of the BIT decreased by 23% after the fatigue test with 4×10 10 switching cycles.

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Ferroelectric properties of vanadium-doped Bi 4Ti 3O 12 thin films deposited by a sol-gel method

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Ferroelectric properties of vanadium-doped Bi ₄Ti ₃O ₁₂ thin films deposited by a sol-gel method