Ferroelectric properties of vanadium-doped Bi 4Ti 3O 12 thin films deposited by a sol-gel method

S. S. Kim, T. K. Song, J. K. Kim, Jinheung Kim

Research output: Contribution to journalArticlepeer-review

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Abstract

We report the enhancement of ferroelectric properties in vanadium-doped Bi 4Ti 3O 12 (BIT) thin films deposited by a sol-gel method. Compared to the undoped BIT, V-doped BIT (BTV) showed higher polarizations and a better fatigue resistance as reported in ceramic systems recently [Noguchi et al., Appl. Phys. Lett. 78, 1903 (2001)]. BTV showed a remanent polarization (2P r) of 15.9 μC/cm 2, higher than the value for BIT, 12.5 μC/cm 2. The polarization of the BTV thin film capacitor decreased by 19%, while that of the BIT decreased by 23% after the fatigue test with 4×10 10 switching cycles.

Original languageEnglish
Pages (from-to)2213-2215
Number of pages3
JournalJournal of Applied Physics
Volume92
Issue number4
DOIs
StatePublished - 15 Aug 2002

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