Ferroelectric properties of tungsten-doped bismuth titanate thin film prepared by sol-gel route

Jong Kuk Kim; Tae Keon Song; Sang Su Kim; Jinheung Kim

doi:10.1016/S0167-577X(02)00906-0

Ferroelectric properties of tungsten-doped bismuth titanate thin film prepared by sol-gel route

Jong Kuk Kim, Tae Keon Song, Sang Su Kim, Jinheung Kim

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

38 Scopus citations

Abstract

Ferroelectric properties of W-doped Bi₄Ti₃O₁₂ (W-BIT) thin film were investigated in comparison with those of undoped Bi₄Ti₃O₁₂ (BIT), which were prepared by sol-gel method and spin-coating technique. X-ray diffraction (XRD) measurements showed layered perovskite structures with a single phase in both films. The W-BIT film appeared to have superior ferroelectric properties to the undoped film prepared under the same conditions. The remanent polarization (2P_r) and the coercive field (2E_c) of the W-BIT film were 20 μC/cm² and 90 kV/cm, respectively, with a maximum applied field of 170 kV/cm. In addition, the W-BIT film showed a fatigue-free behavior up to 4.5×10¹⁰ read/write cycles.

Original language	English
Pages (from-to)	964-968
Number of pages	5
Journal	Materials Letters
Volume	57
Issue number	4
DOIs	https://doi.org/10.1016/S0167-577X(02)00906-0
State	Published - Dec 2002

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation (KRF-2000-005-Y00070).

Keywords

BiTiO film
Ferroelectric
Sol-gel
Spin-coating
W-doping

Access to Document

10.1016/S0167-577X(02)00906-0

Cite this

@article{8b7791904383429697503d79d154f65e,

title = "Ferroelectric properties of tungsten-doped bismuth titanate thin film prepared by sol-gel route",

abstract = "Ferroelectric properties of W-doped Bi4Ti3O12 (W-BIT) thin film were investigated in comparison with those of undoped Bi4Ti3O12 (BIT), which were prepared by sol-gel method and spin-coating technique. X-ray diffraction (XRD) measurements showed layered perovskite structures with a single phase in both films. The W-BIT film appeared to have superior ferroelectric properties to the undoped film prepared under the same conditions. The remanent polarization (2Pr) and the coercive field (2Ec) of the W-BIT film were 20 μC/cm2 and 90 kV/cm, respectively, with a maximum applied field of 170 kV/cm. In addition, the W-BIT film showed a fatigue-free behavior up to 4.5×1010 read/write cycles.",

keywords = "BiTiO film, Ferroelectric, Sol-gel, Spin-coating, W-doping",

author = "Kim, {Jong Kuk} and Song, {Tae Keon} and Kim, {Sang Su} and Jinheung Kim",

note = "Funding Information: This work was supported by the Korea Research Foundation (KRF-2000-005-Y00070).",

year = "2002",

month = dec,

doi = "10.1016/S0167-577X(02)00906-0",

language = "English",

volume = "57",

pages = "964--968",

journal = "Materials Letters",

issn = "0167-577X",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Ferroelectric properties of tungsten-doped bismuth titanate thin film prepared by sol-gel route

AU - Kim, Jong Kuk

AU - Song, Tae Keon

AU - Kim, Sang Su

AU - Kim, Jinheung

N1 - Funding Information: This work was supported by the Korea Research Foundation (KRF-2000-005-Y00070).

PY - 2002/12

Y1 - 2002/12

N2 - Ferroelectric properties of W-doped Bi4Ti3O12 (W-BIT) thin film were investigated in comparison with those of undoped Bi4Ti3O12 (BIT), which were prepared by sol-gel method and spin-coating technique. X-ray diffraction (XRD) measurements showed layered perovskite structures with a single phase in both films. The W-BIT film appeared to have superior ferroelectric properties to the undoped film prepared under the same conditions. The remanent polarization (2Pr) and the coercive field (2Ec) of the W-BIT film were 20 μC/cm2 and 90 kV/cm, respectively, with a maximum applied field of 170 kV/cm. In addition, the W-BIT film showed a fatigue-free behavior up to 4.5×1010 read/write cycles.

AB - Ferroelectric properties of W-doped Bi4Ti3O12 (W-BIT) thin film were investigated in comparison with those of undoped Bi4Ti3O12 (BIT), which were prepared by sol-gel method and spin-coating technique. X-ray diffraction (XRD) measurements showed layered perovskite structures with a single phase in both films. The W-BIT film appeared to have superior ferroelectric properties to the undoped film prepared under the same conditions. The remanent polarization (2Pr) and the coercive field (2Ec) of the W-BIT film were 20 μC/cm2 and 90 kV/cm, respectively, with a maximum applied field of 170 kV/cm. In addition, the W-BIT film showed a fatigue-free behavior up to 4.5×1010 read/write cycles.

KW - BiTiO film

KW - Ferroelectric

KW - Sol-gel

KW - Spin-coating

KW - W-doping

UR - http://www.scopus.com/inward/record.url?scp=0036895633&partnerID=8YFLogxK

U2 - 10.1016/S0167-577X(02)00906-0

DO - 10.1016/S0167-577X(02)00906-0

M3 - Article

AN - SCOPUS:0036895633

SN - 0167-577X

VL - 57

SP - 964

EP - 968

JO - Materials Letters

JF - Materials Letters

IS - 4

ER -

Ferroelectric properties of tungsten-doped bismuth titanate thin film prepared by sol-gel route

Abstract

Bibliographical note

Keywords

Access to Document

Fingerprint

Cite this