Ferroelectric properties of W-doped Bi4Ti3O12 (W-BIT) thin film were investigated in comparison with those of undoped Bi4Ti3O12 (BIT), which were prepared by sol-gel method and spin-coating technique. X-ray diffraction (XRD) measurements showed layered perovskite structures with a single phase in both films. The W-BIT film appeared to have superior ferroelectric properties to the undoped film prepared under the same conditions. The remanent polarization (2Pr) and the coercive field (2Ec) of the W-BIT film were 20 μC/cm2 and 90 kV/cm, respectively, with a maximum applied field of 170 kV/cm. In addition, the W-BIT film showed a fatigue-free behavior up to 4.5×1010 read/write cycles.
Bibliographical noteFunding Information:
This work was supported by the Korea Research Foundation (KRF-2000-005-Y00070).
- BiTiO film