Abstract
Graphene transistors with a dual-gate structure have been fabricated to study the effects of a functional dielectric substrate. From graphene’s conductance modulation by using dual-gate voltage control in which a polymethyl methacrylate (PMMA) layer is employed as a top-gate dielectric, we propose that the interaction between the graphene and the functional material working as a back-gate dielectric substrate can be understood. We evaluated two graphene devices, one having the standard structure of Si/SiO2/graphene/PMMA/top-gate and the other employing periodically poled lithium niobate (PPLN) with the structure of PPLN/graphene/PMMA/top-gate. The feasibility of this approach is discussed in terms of the effect of the alternating polarization domains on graphene’s charge transport.
| Original language | English |
|---|---|
| Pages (from-to) | 888-892 |
| Number of pages | 5 |
| Journal | Journal of the Korean Physical Society |
| Volume | 77 |
| Issue number | 10 |
| DOIs | |
| State | Published - Nov 2020 |
Bibliographical note
Funding Information:This work was supported by the Korea Electric Power Corporation (No. R18XA06-54), Republic of Korea, and by the National Research Foundation of Korea (No. NRF-2018R1A2B6004710), Republic of Korea.
Publisher Copyright:
© 2020, The Korean Physical Society.
Keywords
- 2D materials
- Dual-gate
- Ferroelectric
- Field-effect transistor
- Graphene