Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes: A CNT-gated CNT-FET

Dong Su Lee; Johannes Svensson; Sang Wook Lee; Yung Woo Park; Eleanor E.B. Campbell

doi:10.1166/jnn.2006.321

Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes: A CNT-gated CNT-FET

Dong Su Lee, Johannes Svensson, Sang Wook Lee, Yung Woo Park, Eleanor E.B. Campbell

Department of Physics

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We have developed a method to fabricate crossed junctions between semiconducting (s) and metallic (m) carbon nanotubes (CNTs) combining electric field directed chemical vapor deposition growth and dielectrophoretic alignment. By separating the s- and m-CNTs with a thin dielectric an ultrasmall field effect transistor (FET) was fabricated. By using the m-CNT as a gate it was possible to modulate the source-drain current through the s-CNT FET channel. We have also used the m-CNT as an electrical lead. An off-state current lowering was observed when the m-CNT lead was used as a drain electrode.

Original language	English
Pages (from-to)	1325-1330
Number of pages	6
Journal	Journal of Nanoscience and Nanotechnology
Volume	6
Issue number	5
DOIs	https://doi.org/10.1166/jnn.2006.321
State	Published - May 2006

Keywords

Carbon Nanotube
Device Fabrication
Field Effect Transistor

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title = "Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes: A CNT-gated CNT-FET",

abstract = "We have developed a method to fabricate crossed junctions between semiconducting (s) and metallic (m) carbon nanotubes (CNTs) combining electric field directed chemical vapor deposition growth and dielectrophoretic alignment. By separating the s- and m-CNTs with a thin dielectric an ultrasmall field effect transistor (FET) was fabricated. By using the m-CNT as a gate it was possible to modulate the source-drain current through the s-CNT FET channel. We have also used the m-CNT as an electrical lead. An off-state current lowering was observed when the m-CNT lead was used as a drain electrode.",

keywords = "Carbon Nanotube, Device Fabrication, Field Effect Transistor",

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year = "2006",

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AU - Svensson, Johannes

AU - Lee, Sang Wook

AU - Park, Yung Woo

AU - Campbell, Eleanor E.B.

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AB - We have developed a method to fabricate crossed junctions between semiconducting (s) and metallic (m) carbon nanotubes (CNTs) combining electric field directed chemical vapor deposition growth and dielectrophoretic alignment. By separating the s- and m-CNTs with a thin dielectric an ultrasmall field effect transistor (FET) was fabricated. By using the m-CNT as a gate it was possible to modulate the source-drain current through the s-CNT FET channel. We have also used the m-CNT as an electrical lead. An off-state current lowering was observed when the m-CNT lead was used as a drain electrode.

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KW - Device Fabrication

KW - Field Effect Transistor

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ER -

Fabrication of crossed junctions of semiconducting and metallic carbon nanotubes: A CNT-gated CNT-FET

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Keywords

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