Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

M. Seo; H. Kim; Y. H. Kim; J. Na; B. J. Lee; J. J. Kim; I. Lee; H. Yun; K. McAllister; K. S. Kim; G. H. Jeong; G. T. Kim; S. W. Lee

doi:10.1063/1.4927054

Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

M. Seo, H. Kim, Y. H. Kim, J. Na, B. J. Lee, J. J. Kim, I. Lee, H. Yun, K. McAllister, K. S. Kim, G. H. Jeong, G. T. Kim, S. W. Lee

Department of Physics

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

Original language	English
Article number	033103
Journal	Applied Physics Letters
Volume	107
Issue number	3
DOIs	https://doi.org/10.1063/1.4927054
State	Published - 20 Jul 2015

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© 2015 AIP Publishing LLC.

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title = "Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays",

abstract = "A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.",

author = "M. Seo and H. Kim and Kim, {Y. H.} and J. Na and Lee, {B. J.} and Kim, {J. J.} and I. Lee and H. Yun and K. McAllister and Kim, {K. S.} and Jeong, {G. H.} and Kim, {G. T.} and Lee, {S. W.}",

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day = "20",

doi = "10.1063/1.4927054",

language = "English",

volume = "107",

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T1 - Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

AU - Seo, M.

AU - Kim, H.

AU - Kim, Y. H.

AU - Na, J.

AU - Lee, B. J.

AU - Kim, J. J.

AU - Lee, I.

AU - Yun, H.

AU - McAllister, K.

AU - Kim, K. S.

AU - Jeong, G. H.

AU - Kim, G. T.

AU - Lee, S. W.

PY - 2015/7/20

Y1 - 2015/7/20

N2 - A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

AB - A transistor structure composed of an individual single-walled carbon nanotube (SWNT) channel with a graphene electrode was demonstrated. The integrated arrays of transistor devices were prepared by transferring patterned graphene electrode patterns on top of the aligned SWNT along one direction. Both single and multi layer graphene were used for the electrode materials; typical p-type transistor and Schottky diode behavior were observed, respectively. Based on our fabrication method and device performances, several issues are suggested and discussed to improve the device reliability and finally to realize all carbon based future electronic systems.

UR - http://www.scopus.com/inward/record.url?scp=84937459545&partnerID=8YFLogxK

U2 - 10.1063/1.4927054

DO - 10.1063/1.4927054

M3 - Article

AN - SCOPUS:84937459545

SN - 0003-6951

VL - 107

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 033103

ER -

Fabrication and electrical properties of single wall carbon nanotube channel and graphene electrode based transistors arrays

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