@article{a7c23062890642699cf191533f9b8db6,
title = "Fabrication and characterization of GaN-based light-emitting diode (LED) with triangle-type structure",
abstract = "This study investigated characteristics of the fabricated triangle-type light-emitting diode (T-LED), conventional triangular LED (CT-LED), and conventional square LED (CS-LED). The T-LED is expected to provide uniform current spreading that leads to high output power, low current crowding, and high light extraction in the lateral direction of the LED device, compared to CT-LED and CS-LED. The light extraction of the T-LED in the lateral direction is much higher than that of the CT-LED and the CS-LED due to enhancement of light emission from the sidewalls of the T-LED.",
keywords = "External quantum efficiency, Light emission patterns, Light-emitting diode, Triangle-type LED",
author = "Lee, {Hwan Gi} and Seo, {Jae Hwa} and Yoon, {Young Jun} and Kim, {Young Jae} and Jungjoon Kim and Seongjae Cho and Cho, {Eou Sik} and Bae, {Jin Hyuk} and Lee, {Jung Hee} and Kang, {In Man}",
note = "Funding Information: This research was supported in part by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Korean Ministry of Education, Science and Technology (MEST) under Grants 2012-0005671 and 2013-011522, in part by Samsung Electronics Corporation. This work also was supported by National Research Foundation of Korea(NRF) Grant funded by the Korean Government(NRF-2013-Global Ph.D. Fellowship Program). Publisher Copyright: Copyright {\textcopyright} Taylor & Francis Group, LLC.",
year = "2014",
month = aug,
day = "13",
doi = "10.1080/15421406.2014.935987",
language = "English",
volume = "599",
pages = "163--169",
journal = "Molecular Crystals and Liquid Crystals",
issn = "1542-1406",
publisher = "Taylor and Francis Ltd.",
number = "1",
}