Fabrication and characterization of GaN-based light-emitting diode (LED) with triangle-type structure

Hwan Gi Lee; Jae Hwa Seo; Young Jun Yoon; Young Jae Kim; Jungjoon Kim; Seongjae Cho; Eou Sik Cho; Jin Hyuk Bae; Jung Hee Lee; In Man Kang

doi:10.1080/15421406.2014.935987

Fabrication and characterization of GaN-based light-emitting diode (LED) with triangle-type structure

Hwan Gi Lee, Jae Hwa Seo, Young Jun Yoon, Young Jae Kim, Jungjoon Kim, Seongjae Cho, Eou Sik Cho, Jin Hyuk Bae, Jung Hee Lee, In Man Kang

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

This study investigated characteristics of the fabricated triangle-type light-emitting diode (T-LED), conventional triangular LED (CT-LED), and conventional square LED (CS-LED). The T-LED is expected to provide uniform current spreading that leads to high output power, low current crowding, and high light extraction in the lateral direction of the LED device, compared to CT-LED and CS-LED. The light extraction of the T-LED in the lateral direction is much higher than that of the CT-LED and the CS-LED due to enhancement of light emission from the sidewalls of the T-LED.

Original language	English
Pages (from-to)	163-169
Number of pages	7
Journal	Molecular Crystals and Liquid Crystals
Volume	599
Issue number	1
DOIs	https://doi.org/10.1080/15421406.2014.935987
State	Published - 13 Aug 2014

Bibliographical note

Publisher Copyright:
Copyright © Taylor & Francis Group, LLC.

Keywords

External quantum efficiency
Light emission patterns
Light-emitting diode
Triangle-type LED

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10.1080/15421406.2014.935987

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title = "Fabrication and characterization of GaN-based light-emitting diode (LED) with triangle-type structure",

abstract = "This study investigated characteristics of the fabricated triangle-type light-emitting diode (T-LED), conventional triangular LED (CT-LED), and conventional square LED (CS-LED). The T-LED is expected to provide uniform current spreading that leads to high output power, low current crowding, and high light extraction in the lateral direction of the LED device, compared to CT-LED and CS-LED. The light extraction of the T-LED in the lateral direction is much higher than that of the CT-LED and the CS-LED due to enhancement of light emission from the sidewalls of the T-LED.",

keywords = "External quantum efficiency, Light emission patterns, Light-emitting diode, Triangle-type LED",

author = "Lee, {Hwan Gi} and Seo, {Jae Hwa} and Yoon, {Young Jun} and Kim, {Young Jae} and Jungjoon Kim and Seongjae Cho and Cho, {Eou Sik} and Bae, {Jin Hyuk} and Lee, {Jung Hee} and Kang, {In Man}",

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doi = "10.1080/15421406.2014.935987",

language = "English",

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T1 - Fabrication and characterization of GaN-based light-emitting diode (LED) with triangle-type structure

AU - Lee, Hwan Gi

AU - Seo, Jae Hwa

AU - Yoon, Young Jun

AU - Kim, Young Jae

AU - Kim, Jungjoon

AU - Cho, Seongjae

AU - Cho, Eou Sik

AU - Bae, Jin Hyuk

AU - Lee, Jung Hee

AU - Kang, In Man

PY - 2014/8/13

Y1 - 2014/8/13

N2 - This study investigated characteristics of the fabricated triangle-type light-emitting diode (T-LED), conventional triangular LED (CT-LED), and conventional square LED (CS-LED). The T-LED is expected to provide uniform current spreading that leads to high output power, low current crowding, and high light extraction in the lateral direction of the LED device, compared to CT-LED and CS-LED. The light extraction of the T-LED in the lateral direction is much higher than that of the CT-LED and the CS-LED due to enhancement of light emission from the sidewalls of the T-LED.

AB - This study investigated characteristics of the fabricated triangle-type light-emitting diode (T-LED), conventional triangular LED (CT-LED), and conventional square LED (CS-LED). The T-LED is expected to provide uniform current spreading that leads to high output power, low current crowding, and high light extraction in the lateral direction of the LED device, compared to CT-LED and CS-LED. The light extraction of the T-LED in the lateral direction is much higher than that of the CT-LED and the CS-LED due to enhancement of light emission from the sidewalls of the T-LED.

KW - External quantum efficiency

KW - Light emission patterns

KW - Light-emitting diode

KW - Triangle-type LED

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Fabrication and characterization of GaN-based light-emitting diode (LED) with triangle-type structure

Abstract

Bibliographical note

Keywords

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