Fabrication and characterization of a fully si compatible forming-free GeOxResistive switching random-access memory

Jae Yoon Lee; Youngmin Kim; Ikhyeon Kworn; Il Hwan Cho; Jae Yeon Lee; Soo Gil Kim; Seongjae Cho

doi:10.1109/DRC.2018.8442248

Fabrication and characterization of a fully si compatible forming-free GeO_xResistive switching random-access memory

Jae Yoon Lee
, Youngmin Kim
, Ikhyeon Kworn
, Il Hwan Cho
, Jae Yeon Lee
, Soo Gil Kim
, Seongjae Cho

Electronic and Electrical Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Recently, resistive switching random-access memory (ReRAM) has been considered as one of the most promising nonvolatile memory (NVM) technologies, owing to its high scalability, low power consumption, and fast switching speed [1]. In this work, we designed and fabricated Ni/GeOx/p+ Si ReRAM having narrower parameter distribution, robust endurance, and enhanced superiority in Si processing compatibility. Ge has shown wide applications for Si CMOS extension and photonics towards the advanced VLSI [2], and another application for NVM is reported in this work. The process architecture and measurement results are demonstrated, and the annealing effects are investigated.

Original language	English
Title of host publication	2018 76th Device Research Conference, DRC 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Print)	9781538630280
DOIs	https://doi.org/10.1109/DRC.2018.8442248
State	Published - 20 Aug 2018
Event	76th Device Research Conference, DRC 2018 - Santa Barbara, United States Duration: 24 Jun 2018 → 27 Jun 2018

Publication series

Name	Device Research Conference - Conference Digest, DRC
Volume	2018-June
ISSN (Print)	1548-3770

Conference

Conference	76th Device Research Conference, DRC 2018
Country/Territory	United States
City	Santa Barbara
Period	24/06/18 → 27/06/18

Bibliographical note

Funding Information:
Acknowledgment This work was supported by a research project of SK hynix, Inc.

Publisher Copyright:
© 2018 IEEE.

Access to Document

10.1109/DRC.2018.8442248

Cite this

Lee, J. Y., Kim, Y., Kworn, I., Cho, I. H., Lee, J. Y., Kim, S. G., & Cho, S. (2018). Fabrication and characterization of a fully si compatible forming-free GeO_xResistive switching random-access memory. In 2018 76th Device Research Conference, DRC 2018 Article 8442248 (Device Research Conference - Conference Digest, DRC; Vol. 2018-June). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/DRC.2018.8442248

@inproceedings{ca8710e0828046d483d07d34def223eb,

title = "Fabrication and characterization of a fully si compatible forming-free GeOxResistive switching random-access memory",

abstract = "Recently, resistive switching random-access memory (ReRAM) has been considered as one of the most promising nonvolatile memory (NVM) technologies, owing to its high scalability, low power consumption, and fast switching speed [1]. In this work, we designed and fabricated Ni/GeOx/p+ Si ReRAM having narrower parameter distribution, robust endurance, and enhanced superiority in Si processing compatibility. Ge has shown wide applications for Si CMOS extension and photonics towards the advanced VLSI [2], and another application for NVM is reported in this work. The process architecture and measurement results are demonstrated, and the annealing effects are investigated.",

author = "Lee, \{Jae Yoon\} and Youngmin Kim and Ikhyeon Kworn and Cho, \{Il Hwan\} and Lee, \{Jae Yeon\} and Kim, \{Soo Gil\} and Seongjae Cho",

note = "Funding Information: Acknowledgment This work was supported by a research project of SK hynix, Inc. Publisher Copyright: {\textcopyright} 2018 IEEE.; 76th Device Research Conference, DRC 2018 ; Conference date: 24-06-2018 Through 27-06-2018",

year = "2018",

month = aug,

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doi = "10.1109/DRC.2018.8442248",

language = "English",

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Lee, JY, Kim, Y, Kworn, I, Cho, IH, Lee, JY, Kim, SG & Cho, S 2018, Fabrication and characterization of a fully si compatible forming-free GeO_xResistive switching random-access memory. in 2018 76th Device Research Conference, DRC 2018., 8442248, Device Research Conference - Conference Digest, DRC, vol. 2018-June, Institute of Electrical and Electronics Engineers Inc., 76th Device Research Conference, DRC 2018, Santa Barbara, United States, 24/06/18. https://doi.org/10.1109/DRC.2018.8442248

Fabrication and characterization of a fully si compatible forming-free GeO_xResistive switching random-access memory. / Lee, Jae Yoon; Kim, Youngmin; Kworn, Ikhyeon et al.
2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. 8442248 (Device Research Conference - Conference Digest, DRC; Vol. 2018-June).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Kim, Soo Gil

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N2 - Recently, resistive switching random-access memory (ReRAM) has been considered as one of the most promising nonvolatile memory (NVM) technologies, owing to its high scalability, low power consumption, and fast switching speed [1]. In this work, we designed and fabricated Ni/GeOx/p+ Si ReRAM having narrower parameter distribution, robust endurance, and enhanced superiority in Si processing compatibility. Ge has shown wide applications for Si CMOS extension and photonics towards the advanced VLSI [2], and another application for NVM is reported in this work. The process architecture and measurement results are demonstrated, and the annealing effects are investigated.

AB - Recently, resistive switching random-access memory (ReRAM) has been considered as one of the most promising nonvolatile memory (NVM) technologies, owing to its high scalability, low power consumption, and fast switching speed [1]. In this work, we designed and fabricated Ni/GeOx/p+ Si ReRAM having narrower parameter distribution, robust endurance, and enhanced superiority in Si processing compatibility. Ge has shown wide applications for Si CMOS extension and photonics towards the advanced VLSI [2], and another application for NVM is reported in this work. The process architecture and measurement results are demonstrated, and the annealing effects are investigated.

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Lee JY, Kim Y, Kworn I, Cho IH, Lee JY, Kim SG et al. Fabrication and characterization of a fully si compatible forming-free GeO_xResistive switching random-access memory. In 2018 76th Device Research Conference, DRC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. 8442248. (Device Research Conference - Conference Digest, DRC). doi: 10.1109/DRC.2018.8442248