Fabrication and analysis of epitaxially grown Ge1-xSn x microdisk resonator with 20-nm free-spectral range

Seongjae Cho; Robert Chen; Sukmo Koo; Gary Shambat; Hai Lin; Namkyoo Park; Jelena Vuckǒvič; Theodore I. Kamins; Byung Gook Park; James S. Harris

doi:10.1109/LPT.2011.2163929

Fabrication and analysis of epitaxially grown Ge_1-xSn _x microdisk resonator with 20-nm free-spectral range

Seongjae Cho, Robert Chen, Sukmo Koo, Gary Shambat, Hai Lin, Namkyoo Park, Jelena Vuckǒvič, Theodore I. Kamins, Byung Gook Park, James S. Harris

Electronic and Electrical Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge₁Sn_x grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge ₁Sn_x for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.

Original language	English
Article number	5977001
Pages (from-to)	1535-1537
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	23
Issue number	20
DOIs	https://doi.org/10.1109/LPT.2011.2163929
State	Published - 2011

Bibliographical note

Funding Information:
Manuscript received April 01, 2011; revised July 13, 2011; accepted July 26, 2011. Date of publication August 08, 2011; date of current version September 28, 2011. This work was supported in part by the SRC Interconnect Focus Center Research Program and in part by the U.S. Government through Advanced Photonic Integrated Circuits (APIC). The work of R. Chen was supported by a National Science Foundation (NSF) Graduate Fellowship. The work of H. Lin was supported by a Stanford Graduate Fellowship.

Keywords

Free-spectral range (FSR)
GeSn
infrared (IR)
microdisk resonator
molecular beam epitaxy (MBE)
whispering gallery mode (WGM)

Access to Document

10.1109/LPT.2011.2163929

Cite this

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title = "Fabrication and analysis of epitaxially grown Ge1-xSn x microdisk resonator with 20-nm free-spectral range",

abstract = "In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge1Snx grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge 1Snx for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.",

keywords = "Free-spectral range (FSR), GeSn, infrared (IR), microdisk resonator, molecular beam epitaxy (MBE), whispering gallery mode (WGM)",

author = "Seongjae Cho and Robert Chen and Sukmo Koo and Gary Shambat and Hai Lin and Namkyoo Park and Jelena Vuckǒvi{\v c} and Kamins, {Theodore I.} and Park, {Byung Gook} and Harris, {James S.}",

note = "Funding Information: Manuscript received April 01, 2011; revised July 13, 2011; accepted July 26, 2011. Date of publication August 08, 2011; date of current version September 28, 2011. This work was supported in part by the SRC Interconnect Focus Center Research Program and in part by the U.S. Government through Advanced Photonic Integrated Circuits (APIC). The work of R. Chen was supported by a National Science Foundation (NSF) Graduate Fellowship. The work of H. Lin was supported by a Stanford Graduate Fellowship.",

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doi = "10.1109/LPT.2011.2163929",

language = "English",

volume = "23",

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journal = "IEEE Photonics Technology Letters",

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T1 - Fabrication and analysis of epitaxially grown Ge1-xSn x microdisk resonator with 20-nm free-spectral range

AU - Cho, Seongjae

AU - Chen, Robert

AU - Koo, Sukmo

AU - Shambat, Gary

AU - Lin, Hai

AU - Park, Namkyoo

AU - Vuckǒvič, Jelena

AU - Kamins, Theodore I.

AU - Park, Byung Gook

AU - Harris, James S.

N1 - Funding Information: Manuscript received April 01, 2011; revised July 13, 2011; accepted July 26, 2011. Date of publication August 08, 2011; date of current version September 28, 2011. This work was supported in part by the SRC Interconnect Focus Center Research Program and in part by the U.S. Government through Advanced Photonic Integrated Circuits (APIC). The work of R. Chen was supported by a National Science Foundation (NSF) Graduate Fellowship. The work of H. Lin was supported by a Stanford Graduate Fellowship.

PY - 2011

Y1 - 2011

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AB - In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge1Snx grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge 1Snx for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.

KW - Free-spectral range (FSR)

KW - GeSn

KW - infrared (IR)

KW - microdisk resonator

KW - molecular beam epitaxy (MBE)

KW - whispering gallery mode (WGM)

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