Fabrication and analysis of epitaxially grown Ge1-xSn x microdisk resonator with 20-nm free-spectral range

Seongjae Cho, Robert Chen, Sukmo Koo, Gary Shambat, Hai Lin, Namkyoo Park, Jelena Vuckǒvič, Theodore I. Kamins, Byung Gook Park, James S. Harris

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge1Snx grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge 1Snx for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.

Original languageEnglish
Article number5977001
Pages (from-to)1535-1537
Number of pages3
JournalIEEE Photonics Technology Letters
Issue number20
StatePublished - 2011

Bibliographical note

Funding Information:
Manuscript received April 01, 2011; revised July 13, 2011; accepted July 26, 2011. Date of publication August 08, 2011; date of current version September 28, 2011. This work was supported in part by the SRC Interconnect Focus Center Research Program and in part by the U.S. Government through Advanced Photonic Integrated Circuits (APIC). The work of R. Chen was supported by a National Science Foundation (NSF) Graduate Fellowship. The work of H. Lin was supported by a Stanford Graduate Fellowship.


  • Free-spectral range (FSR)
  • GeSn
  • infrared (IR)
  • microdisk resonator
  • molecular beam epitaxy (MBE)
  • whispering gallery mode (WGM)


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