Extension of the bi-epitaxial Josephson junction process to various substrates

K. Char, M. S. Colclough, L. P. Lee, G. Zaharchuk

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107 Scopus citations


We report an extension of the bi-epitaxial Josephson junction process that permits the use of a variety of substrate materials and allows junctions to be placed at any level of a multilayer structure. The new materials, SrTiO 3, MgO, and CeO2, serve as a base layer, a seed layer, and a buffer layer, respectively, and replace Al2O3, MgO, and SrTiO3 in the original bi-epitaxial process. This new process offers much more flexibility in designing a circuit. Bi-epitaxial junctions made with the new set of materials show much improved electrical properties, especially at 77 K. We attribute the improved electrical characteristics to a better thermal expansion match between the substrate and the thin-film layers. Important junction properties such as critical currents and junction resistances are compared to other types of grain boundary junctions.

Original languageEnglish
Pages (from-to)2177-2179
Number of pages3
JournalApplied Physics Letters
Issue number17
StatePublished - 1991


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