Experimental setup for in Situ investigation of phase changing behavior in phase-change random-access memory medium by microfocusing nanosecond-time-resolved ellipsometry

  • Younhwa Kim
  • , Sang Jun Kim
  • , Sang Youl Kim
  • , Sung Hyuck An
  • , Dong Seok Suh
  • , Jin Seo Noh
  • , Sang Mock Lee
  • , Kijoon H.P. Kim
  • , Woong Chul Shin
  • , Yoonho Khang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

An ellipsometer with nanosecond time resolution has been proposed for the investigation of the phase change behavior of Ge2Sb 2Te5 heated by electrical pulses of 20-100ns in real time. This passive single-wavelength ellipsometer has a division-of-amplitude photopolarimeter (DOAP) configuration for polarization state detection to collect ellipsometric data in nanoseconds and consists of a microfocusing lens system to achieve a spot size of ∼15 μm.

Original languageEnglish
Pages (from-to)6452-6454
Number of pages3
JournalJapanese Journal of Applied Physics
Volume45
Issue number8 A
DOIs
StatePublished - 4 Aug 2006

Keywords

  • Crystallization kinetic
  • Ge-Sb-Te
  • PRAM
  • Phase change optioal disk
  • Time-resolved ellipsometry

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