Abstract
An ellipsometer with nanosecond time resolution has been proposed for the investigation of the phase change behavior of Ge2Sb 2Te5 heated by electrical pulses of 20-100ns in real time. This passive single-wavelength ellipsometer has a division-of-amplitude photopolarimeter (DOAP) configuration for polarization state detection to collect ellipsometric data in nanoseconds and consists of a microfocusing lens system to achieve a spot size of ∼15 μm.
Original language | English |
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Pages (from-to) | 6452-6454 |
Number of pages | 3 |
Journal | Japanese Journal of Applied Physics |
Volume | 45 |
Issue number | 8 A |
DOIs | |
State | Published - 4 Aug 2006 |
Keywords
- Crystallization kinetic
- Ge-Sb-Te
- PRAM
- Phase change optioal disk
- Time-resolved ellipsometry