Experimental setup for in Situ investigation of phase changing behavior in phase-change random-access memory medium by microfocusing nanosecond-time-resolved ellipsometry

Younhwa Kim, Sang Jun Kim, Sang Youl Kim, Sung Hyuck An, Dong Seok Suh, Jin Seo Noh, Sang Mock Lee, Kijoon H.P. Kim, Woong Chul Shin, Yoonho Khang

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

An ellipsometer with nanosecond time resolution has been proposed for the investigation of the phase change behavior of Ge2Sb 2Te5 heated by electrical pulses of 20-100ns in real time. This passive single-wavelength ellipsometer has a division-of-amplitude photopolarimeter (DOAP) configuration for polarization state detection to collect ellipsometric data in nanoseconds and consists of a microfocusing lens system to achieve a spot size of ∼15 μm.

Original languageEnglish
Pages (from-to)6452-6454
Number of pages3
JournalJapanese Journal of Applied Physics
Volume45
Issue number8 A
DOIs
StatePublished - 4 Aug 2006

Keywords

  • Crystallization kinetic
  • Ge-Sb-Te
  • PRAM
  • Phase change optioal disk
  • Time-resolved ellipsometry

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