Evolution of local work function in epitaxial VO 2 thin films spanning the metal-insulator transition

Ahrum Sohn, Haeri Kim, Dong Wook Kim, Changhyun Ko, Shriram Ramanathan, Jonghyurk Park, Giwan Seo, Bong Jun Kim, Jun Hwan Shin, Hyun Tak Kim

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Transport and Kelvin probe force microscopy measurements were simultaneously conducted on epitaxial VO 2 thin films. The samples work function abruptly dropped from 4.88 eV to 4.70 eV during heating from 333 K to 353 K, suggesting a significant change in its electronic band structure spanning the metal insulator transition. The work function showed nearly no statistical deviation across the films surface during the transition, likely due to band bending at the boundaries of the small domains. Resistance profiles confirmed that the local work function corresponded closely to the resistance of the corresponding area.

Original languageEnglish
Article number191605
JournalApplied Physics Letters
Issue number19
StatePublished - 5 Nov 2012

Bibliographical note

Funding Information:
This work was supported by the Quantum Metamaterials Research Center (2009-0063324), the Basic Research Program (2010-0009344), through the National Research Foundation of Korea Grant funded by the Korean Ministry of Education, Science, and Technology (MEST), and a Korea-CIS project of MEST in Korea, and MIT Creative Research Project in ETRI. C.K. and S.R. acknowledge AFOSR Grant No. FA9550-08-1-0203 for financial support.


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