Evolution of electronic states in GaP1−xNx studied by resonant Raman scattering spectroscopy

S. Yoon; M. J. Seong; J. F. Geisz; A. Duda; A. Mascarenhas

doi:10.1103/PhysRevB.67.235209

Evolution of electronic states in GaP_1−xN_x studied by resonant Raman scattering spectroscopy

S. Yoon, M. J. Seong, J. F. Geisz, A. Duda, A. Mascarenhas

Department of Physics

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Two distinct maxima E_W and E_W′ are observed in the resonant Raman scattering profile for the zone-center longitudinal-optical phonon asymmetric linewidth broadening in GaP_1−xN_x. E_W originates from the X-point conduction-band state perturbed by isolated nitrogen state N_X and the nitrogen-nitrogen (NN) pair and cluster states, and E_W′ from the effective band-edge states which are comprised of NN pairs and clusters. The study reveals that E_W remains stationary with increased nitrogen doping whereas E_W′ closely follows the absorption edge.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	67
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.67.235209
State	Published - 27 Jun 2003

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10.1103/PhysRevB.67.235209

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title = "Evolution of electronic states in GaP1−xNx studied by resonant Raman scattering spectroscopy",

abstract = "Two distinct maxima EW and EW′ are observed in the resonant Raman scattering profile for the zone-center longitudinal-optical phonon asymmetric linewidth broadening in GaP1−xNx. EW originates from the X-point conduction-band state perturbed by isolated nitrogen state NX and the nitrogen-nitrogen (NN) pair and cluster states, and EW′ from the effective band-edge states which are comprised of NN pairs and clusters. The study reveals that EW remains stationary with increased nitrogen doping whereas EW′ closely follows the absorption edge.",

author = "S. Yoon and Seong, {M. J.} and Geisz, {J. F.} and A. Duda and A. Mascarenhas",

year = "2003",

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doi = "10.1103/PhysRevB.67.235209",

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AU - Yoon, S.

AU - Seong, M. J.

AU - Geisz, J. F.

AU - Duda, A.

AU - Mascarenhas, A.

PY - 2003/6/27

Y1 - 2003/6/27

N2 - Two distinct maxima EW and EW′ are observed in the resonant Raman scattering profile for the zone-center longitudinal-optical phonon asymmetric linewidth broadening in GaP1−xNx. EW originates from the X-point conduction-band state perturbed by isolated nitrogen state NX and the nitrogen-nitrogen (NN) pair and cluster states, and EW′ from the effective band-edge states which are comprised of NN pairs and clusters. The study reveals that EW remains stationary with increased nitrogen doping whereas EW′ closely follows the absorption edge.

AB - Two distinct maxima EW and EW′ are observed in the resonant Raman scattering profile for the zone-center longitudinal-optical phonon asymmetric linewidth broadening in GaP1−xNx. EW originates from the X-point conduction-band state perturbed by isolated nitrogen state NX and the nitrogen-nitrogen (NN) pair and cluster states, and EW′ from the effective band-edge states which are comprised of NN pairs and clusters. The study reveals that EW remains stationary with increased nitrogen doping whereas EW′ closely follows the absorption edge.

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JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

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ER -

Evolution of electronic states in GaP1−xNx studied by resonant Raman scattering spectroscopy

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Evolution of electronic states in GaP_1−xN_x studied by resonant Raman scattering spectroscopy