Evolution of electronic states in GaAs1−xNx probed by resonant Raman spectroscopy

A. Mascarenhas, M. J. Seong, S. Yoon, J. C. Verley, J. F. Geisz, M. C. Hanna

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Two distinct maxima EW and EW′ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in GaAs1−xNx and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in GaAs1−xNx, as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Issue number23
StatePublished - 11 Dec 2003


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