Evolution of electronic states in GaAs1−xNx probed by resonant Raman spectroscopy

A. Mascarenhas; M. J. Seong; S. Yoon; J. C. Verley; J. F. Geisz; M. C. Hanna

doi:10.1103/PhysRevB.68.233201

Evolution of electronic states in GaAs_1−xN_x probed by resonant Raman spectroscopy

A. Mascarenhas, M. J. Seong, S. Yoon, J. C. Verley, J. F. Geisz, M. C. Hanna

Department of Physics

Research output: Contribution to journal › Article › peer-review

21 Scopus citations

Abstract

Two distinct maxima E_W and E_W′ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in GaAs_1−xN_x and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in GaAs_1−xN_x, as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors.

Original language	English
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	68
Issue number	23
DOIs	https://doi.org/10.1103/PhysRevB.68.233201
State	Published - 11 Dec 2003

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10.1103/PhysRevB.68.233201

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title = "Evolution of electronic states in GaAs1−xNx probed by resonant Raman spectroscopy",

abstract = "Two distinct maxima EW and EW′ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in GaAs1−xNx and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in GaAs1−xNx, as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors.",

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AU - Geisz, J. F.

AU - Hanna, M. C.

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N2 - Two distinct maxima EW and EW′ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in GaAs1−xNx and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in GaAs1−xNx, as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors.

AB - Two distinct maxima EW and EW′ are observed in the resonant Raman-scattering profile for the LO phonon asymmetric linewidth broadening in GaAs1−xNx and are attributed to states arising from a splitting of the quadruply degenerate conduction band near the L point. The data provide further insight into the physics underlying the giant band-gap bowing observed in GaAs1−xNx, as well as reveal asymmetric linewidth broadening to be a powerful signature for studying strongly localized impurity states in semiconductors.

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ER -

Evolution of electronic states in GaAs1−xNx probed by resonant Raman spectroscopy

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Evolution of electronic states in GaAs_1−xN_x probed by resonant Raman spectroscopy