Eu7Ga6Sb8: A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains

Seon Mi Park; Sung Jin Kim; Mercouri G. Kanatzidis

doi:10.1016/j.jssc.2004.04.025

Eu₇Ga₆Sb₈: A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains

Seon Mi Park, Sung Jin Kim, Mercouri G. Kanatzidis

Department of Chemistry & Nanoscience

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

The Zintl phase Eu₇Ga₆Sb₈ was obtained from a direct element combination reaction at 900°C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17)Å, b=17.2876(19)Å, c=17.9200(19)Å, and Z=8. In Eu₇Ga ₆Sb₈, the anionic framework forms infinite chains of [Ga₆Sb₈]^14- which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu²⁺ atoms and also within the sheet, Eu²⁺ atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga₄)⁶⁺ and dimers (Ga₂)⁴⁺ connected by Sb atoms. The compound is a narrow band-gap semiconductor with E_g∼0.6eV and satisfies the classical Zintl concept. Extended Hückel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu ₇Ga₆Sb₈ show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9K.

Original language	English
Pages (from-to)	2867-2874
Number of pages	8
Journal	Journal of Solid State Chemistry
Volume	177
Issue number	8
DOIs	https://doi.org/10.1016/j.jssc.2004.04.025
State	Published - Aug 2004

Bibliographical note

Funding Information:
Financial supports from Korea Research Foundation (KRF-2003-042-C00065) and the Center for Fundamental Materials Research are gratefully acknowledged. Financial support from the Department of Energy (Grant # DE-FG02-99ER45793 to MGK) is gratefully acknowledged. This work made use of the SEM/EDS facilities of the Center of Advanced Microscopy at Michigan State University.

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10.1016/j.jssc.2004.04.025

Cite this

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title = "Eu7Ga6Sb8: A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains",

abstract = "The Zintl phase Eu7Ga6Sb8 was obtained from a direct element combination reaction at 900°C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17){\AA}, b=17.2876(19){\AA}, c=17.9200(19){\AA}, and Z=8. In Eu7Ga 6Sb8, the anionic framework forms infinite chains of [Ga6Sb8]14- which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu2+ atoms and also within the sheet, Eu2+ atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga4)6+ and dimers (Ga2)4+ connected by Sb atoms. The compound is a narrow band-gap semiconductor with Eg∼0.6eV and satisfies the classical Zintl concept. Extended H{\"u}ckel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu 7Ga6Sb8 show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9K.",

author = "Park, {Seon Mi} and Kim, {Sung Jin} and Kanatzidis, {Mercouri G.}",

note = "Funding Information: Financial supports from Korea Research Foundation (KRF-2003-042-C00065) and the Center for Fundamental Materials Research are gratefully acknowledged. Financial support from the Department of Energy (Grant # DE-FG02-99ER45793 to MGK) is gratefully acknowledged. This work made use of the SEM/EDS facilities of the Center of Advanced Microscopy at Michigan State University. ",

year = "2004",

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T2 - A Zintl phase with Ga-Ga bonds and polymeric gallium antimonide chains

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AU - Kim, Sung Jin

AU - Kanatzidis, Mercouri G.

N1 - Funding Information: Financial supports from Korea Research Foundation (KRF-2003-042-C00065) and the Center for Fundamental Materials Research are gratefully acknowledged. Financial support from the Department of Energy (Grant # DE-FG02-99ER45793 to MGK) is gratefully acknowledged. This work made use of the SEM/EDS facilities of the Center of Advanced Microscopy at Michigan State University.

PY - 2004/8

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N2 - The Zintl phase Eu7Ga6Sb8 was obtained from a direct element combination reaction at 900°C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17)Å, b=17.2876(19)Å, c=17.9200(19)Å, and Z=8. In Eu7Ga 6Sb8, the anionic framework forms infinite chains of [Ga6Sb8]14- which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu2+ atoms and also within the sheet, Eu2+ atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga4)6+ and dimers (Ga2)4+ connected by Sb atoms. The compound is a narrow band-gap semiconductor with Eg∼0.6eV and satisfies the classical Zintl concept. Extended Hückel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu 7Ga6Sb8 show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9K.

AB - The Zintl phase Eu7Ga6Sb8 was obtained from a direct element combination reaction at 900°C. It crystallizes in the orthorhombic space group Pbca (No. 61) with a=15.6470(17)Å, b=17.2876(19)Å, c=17.9200(19)Å, and Z=8. In Eu7Ga 6Sb8, the anionic framework forms infinite chains of [Ga6Sb8]14- which are arranged side by side to make a sheet-like arrangement but without linking. The sheets of chains are separated by Eu2+ atoms and also within the sheet, Eu2+ atoms fill the spaces between two chains. The chain is made up of homoatomic tetramers (Ga4)6+ and dimers (Ga2)4+ connected by Sb atoms. The compound is a narrow band-gap semiconductor with Eg∼0.6eV and satisfies the classical Zintl concept. Extended Hückel band structure calculations confirm that the material is a semiconductor and suggest that the structure is stabilized by strong Ga-Ga covalent bonding interactions. Magnetic susceptibility measurements for Eu 7Ga6Sb8 show that the Eu atoms are divalent and the compound has an antiferromagnetic transition at 9K.

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