Epitaxial thin films of multiferroic GaFeO3 on conducting indium tin oxide (001) buffered yttrium-stabilized zirconia (001) by pulsed laser deposition

M. Trassin, N. Viart, G. Versini, J. L. Loison, J. P. Vola, G. Schmerber, O. Cŕgut, S. Barre, G. Pourroy, J. H. Lee, W. Jo, C. Ḿny

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Abstract

Epitaxial films of an alternative multiferroic material, GaFe O3 (GFO), were grown by pulsed laser deposition on yttrium-stabilized zirconia (001) and on conducting buffer layers of indium tin oxide (001). They present a perfect epitaxial growth along the GFO [010] axis and six crystallographic variants in the film's plane. Their magnetic properties are close to those of the bulk with an out-of-plane [010] hard direction and a Curie temperature of ∼200 K. The films did exhibit ferroelectric properties when characterized by electrostatic force microscopy.

Original languageEnglish
Article number202504
JournalApplied Physics Letters
Volume91
Issue number20
DOIs
StatePublished - 2007

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