Epitaxial films of an alternative multiferroic material, GaFe O3 (GFO), were grown by pulsed laser deposition on yttrium-stabilized zirconia (001) and on conducting buffer layers of indium tin oxide (001). They present a perfect epitaxial growth along the GFO  axis and six crystallographic variants in the film's plane. Their magnetic properties are close to those of the bulk with an out-of-plane  hard direction and a Curie temperature of ∼200 K. The films did exhibit ferroelectric properties when characterized by electrostatic force microscopy.
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This work was supported by the Hubert Curien Partnership “Star Project,” Ref. No. 16559YG.