Epitaxial growth of aligned GaN nanowires and nanobridges

Kyungkon Kim, Tania Henry, George Cui, Jung Han, Yoon Kyu Song, Arto V. Nurmikko, Hong Tang

Research output: Contribution to journalArticlepeer-review

10 Scopus citations


Homo-epitaxialy grown aligned GaN nanowires were prepared on crystalline GaN mesas, The GaN nanowires showed preferential growth along the {1010} direction (m-axis direction). By using selectively positioned and crystallographically well defined GaN epitaxial lateral overgrowth (ELO) mesas as substrate, we obtained horizontally aligned GaN nanowires, in comb-like arrays and hexagonal network interconnecting the ELO mesas. Preliminary testing of the nanomechanical behavior of horizontal nanowires is reported. Combination of ELO with nanowire synthesis is expected to provide a new paradigm for nanoelectronic and electromechanical devices.

Original languageEnglish
Pages (from-to)1810-1814
Number of pages5
JournalPhysica Status Solidi (B) Basic Research
Issue number6
StatePublished - Jun 2007


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