Epitaxial growth and the magnetic properties of orthorhombic YTiO 3 thin films

S. C. Chae; Y. J. Chang; S. S.A. Seo; T. W. Noh; D. W. Kim; C. U. Jung

doi:10.1063/1.2374850

Epitaxial growth and the magnetic properties of orthorhombic YTiO ₃ thin films

S. C. Chae, Y. J. Chang, S. S.A. Seo, T. W. Noh, D. W. Kim, C. U. Jung

Department of Physics

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

High-quality YTi O3 thin films were grown on LaAl O3 (110) substrates at low oxygen pressures (≤ 10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed the authors to grow epitaxial YTi O3 thin films, which have an orthorhombic crystal structure with quite different a - and b -axis lattice constants. The YTi O3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 μB Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., [001].

Original language	English
Article number	182512
Journal	Applied Physics Letters
Volume	89
Issue number	18
DOIs	https://doi.org/10.1063/1.2374850
State	Published - 2006

Bibliographical note

Funding Information:
This work was supported financially by the Korea Science and Engineering Foundation (KOSEF) through the Creative Research Initiative Program and the Center for Strongly Correlated Materials Research and by the Korean Ministry of Education through the BK21 projects. One of the authors (C.U.J.) was also supported by a Korea Research Foundation Grant (MOEHRD; KRF-2005-041-C00165) and by the Basic Research Program of KOSEF (Grant no. R01-2006-000-11071-0). Experiments at PLS were supported in part by MOST and POSTECH.

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10.1063/1.2374850

Cite this

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title = "Epitaxial growth and the magnetic properties of orthorhombic YTiO 3 thin films",

abstract = "High-quality YTi O3 thin films were grown on LaAl O3 (110) substrates at low oxygen pressures (≤ 10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed the authors to grow epitaxial YTi O3 thin films, which have an orthorhombic crystal structure with quite different a - and b -axis lattice constants. The YTi O3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 μB Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., [001].",

author = "Chae, {S. C.} and Chang, {Y. J.} and Seo, {S. S.A.} and Noh, {T. W.} and Kim, {D. W.} and Jung, {C. U.}",

note = "Funding Information: This work was supported financially by the Korea Science and Engineering Foundation (KOSEF) through the Creative Research Initiative Program and the Center for Strongly Correlated Materials Research and by the Korean Ministry of Education through the BK21 projects. One of the authors (C.U.J.) was also supported by a Korea Research Foundation Grant (MOEHRD; KRF-2005-041-C00165) and by the Basic Research Program of KOSEF (Grant no. R01-2006-000-11071-0). Experiments at PLS were supported in part by MOST and POSTECH.",

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AU - Chae, S. C.

AU - Chang, Y. J.

AU - Seo, S. S.A.

AU - Noh, T. W.

AU - Kim, D. W.

AU - Jung, C. U.

N1 - Funding Information: This work was supported financially by the Korea Science and Engineering Foundation (KOSEF) through the Creative Research Initiative Program and the Center for Strongly Correlated Materials Research and by the Korean Ministry of Education through the BK21 projects. One of the authors (C.U.J.) was also supported by a Korea Research Foundation Grant (MOEHRD; KRF-2005-041-C00165) and by the Basic Research Program of KOSEF (Grant no. R01-2006-000-11071-0). Experiments at PLS were supported in part by MOST and POSTECH.

PY - 2006

Y1 - 2006

N2 - High-quality YTi O3 thin films were grown on LaAl O3 (110) substrates at low oxygen pressures (≤ 10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed the authors to grow epitaxial YTi O3 thin films, which have an orthorhombic crystal structure with quite different a - and b -axis lattice constants. The YTi O3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 μB Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., [001].

AB - High-quality YTi O3 thin films were grown on LaAl O3 (110) substrates at low oxygen pressures (≤ 10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed the authors to grow epitaxial YTi O3 thin films, which have an orthorhombic crystal structure with quite different a - and b -axis lattice constants. The YTi O3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 μB Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., [001].

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