High-quality YTi O3 thin films were grown on LaAl O3 (110) substrates at low oxygen pressures (≤ 10-8 Torr) using pulsed laser deposition. The in-plane asymmetric atomic arrangements at the substrate surface allowed the authors to grow epitaxial YTi O3 thin films, which have an orthorhombic crystal structure with quite different a - and b -axis lattice constants. The YTi O3 film exhibited a clear ferromagnetic transition at 30 K with a saturation magnetization of about 0.7 μB Ti. The magnetic easy axis was found to be along the [1-10] direction of the substrate, which differs from the single crystal easy axis direction, i.e., .
Bibliographical noteFunding Information:
This work was supported financially by the Korea Science and Engineering Foundation (KOSEF) through the Creative Research Initiative Program and the Center for Strongly Correlated Materials Research and by the Korean Ministry of Education through the BK21 projects. One of the authors (C.U.J.) was also supported by a Korea Research Foundation Grant (MOEHRD; KRF-2005-041-C00165) and by the Basic Research Program of KOSEF (Grant no. R01-2006-000-11071-0). Experiments at PLS were supported in part by MOST and POSTECH.