Enhancement of resistive switching under confined current path distribution enabled by insertion of atomically thin defective monolayer graphene

Keundong Lee, Inrok Hwang, Sangik Lee, Sungtaek Oh, Dukhyun Lee, Cheol Kyeom Kim, Yoonseung Nam, Sahwan Hong, Chansoo Yoon, Robert B. Morgan, Hakseong Kim, Sunae Seo, David H. Seo, Sangwook Lee, Bae Ho Park

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

Resistive random access memory (ReRAM) devices have been extensively investigated resulting in significant enhancement of switching properties. However fluctuations in switching parameters are still critical weak points which cause serious failures during 'reading' and 'writing' operations of ReRAM devices. It is believed that such fluctuations may be originated by random creation and rupture of conducting filaments inside ReRAM oxides. Here, we introduce defective monolayer graphene between an oxide film and an electrode to induce confined current path distribution inside the oxide film, and thus control the creation and rupture of conducting filaments. The ReRAM device with an atomically thin interlayer of defective monolayer graphene reveals much reduced fluctuations in switching parameters compared to a conventional one. Our results demonstrate that defective monolayer graphene paves the way to reliable ReRAM devices operating under confined current path distribution.

Original languageEnglish
Article number11279
JournalScientific Reports
Volume5
DOIs
StatePublished - 10 Jul 2015

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