Enhancement of program speed in dopant-segregated Schottky-Barrier (DSSB) finFET SONOS for NAND-type flash memory

Sung Jin Choi; Jin Woo Han; Sungho Kim; Moon Gyu Jang; Jin Soo Kim; Kwang Hee Kim; Gi Sung Lee; Jae Sub Oh; Myeong Ho Song; Yun Chang Park; Jeoung Woo Kim; Yang Kyu Choi

doi:10.1109/LED.2008.2008667

Enhancement of program speed in dopant-segregated Schottky-Barrier (DSSB) finFET SONOS for NAND-type flash memory

Sung Jin Choi, Jin Woo Han, Sungho Kim, Moon Gyu Jang, Jin Soo Kim, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh, Myeong Ho Song, Yun Chang Park, Jeoung Woo Kim, Yang Kyu Choi

Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND Flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (V_th) shift of 4.5 V is achieved in a fast programming time of 100 ns.

Original language	English
Pages (from-to)	78-81
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	30
Issue number	1
DOIs	https://doi.org/10.1109/LED.2008.2008667
State	Published - 2009

Keywords

Dopant segregated (DS)
FinFET
Flash memory
Hot electrons
NAND Flash
Nonvolatile memory
Schottky-barrier MOSFET
Silicon-oxide-nitride-oxide-silicon (SONOS)
SONOS memory

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title = "Enhancement of program speed in dopant-segregated Schottky-Barrier (DSSB) finFET SONOS for NAND-type flash memory",

abstract = "A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND Flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (Vth) shift of 4.5 V is achieved in a fast programming time of 100 ns.",

keywords = "Dopant segregated (DS), FinFET, Flash memory, Hot electrons, NAND Flash, Nonvolatile memory, Schottky-barrier MOSFET, Silicon-oxide-nitride-oxide-silicon (SONOS), SONOS memory",

author = "Choi, {Sung Jin} and Han, {Jin Woo} and Sungho Kim and Jang, {Moon Gyu} and Kim, {Jin Soo} and Kim, {Kwang Hee} and Lee, {Gi Sung} and Oh, {Jae Sub} and Song, {Myeong Ho} and Park, {Yun Chang} and Kim, {Jeoung Woo} and Choi, {Yang Kyu}",

year = "2009",

doi = "10.1109/LED.2008.2008667",

language = "English",

volume = "30",

pages = "78--81",

journal = "IEEE Electron Device Letters",

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AU - Choi, Sung Jin

AU - Han, Jin Woo

AU - Kim, Sungho

AU - Jang, Moon Gyu

AU - Kim, Jin Soo

AU - Kim, Kwang Hee

AU - Lee, Gi Sung

AU - Oh, Jae Sub

AU - Song, Myeong Ho

AU - Park, Yun Chang

AU - Kim, Jeoung Woo

AU - Choi, Yang Kyu

PY - 2009

Y1 - 2009

N2 - A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND Flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (Vth) shift of 4.5 V is achieved in a fast programming time of 100 ns.

AB - A dopant-segregated (DS) Schottky-barrier (DSSB) FinFET SONOS for NAND Flash memory with a proposed architecture is demonstrated for the first time. A DSSB technique with a nickel-silicided source/drain (S/D) is integrated in the FinFET with a 30-50-nm range of fin width. Compared with the conventional FinFET SONOS, the DSSB FinFET SONOS boasts very fast programming time with low voltage. For a programming state, hot electrons triggered by sharp band bending at the DS S/D region are used. As a result, a threshold voltage (Vth) shift of 4.5 V is achieved in a fast programming time of 100 ns.

KW - Dopant segregated (DS)

KW - FinFET

KW - Flash memory

KW - Hot electrons

KW - NAND Flash

KW - Nonvolatile memory

KW - Schottky-barrier MOSFET

KW - Silicon-oxide-nitride-oxide-silicon (SONOS)

KW - SONOS memory

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DO - 10.1109/LED.2008.2008667

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Enhancement of program speed in dopant-segregated Schottky-Barrier (DSSB) finFET SONOS for NAND-type flash memory

Abstract

Keywords

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