Enhancement of erase speed using silicide drain in nanowire SONOS NAND flash memory

Wandong Kim, Il Han Park, Seongjae Cho, Dong Hua Li, Jang Gn Yun, Byung Gook Park

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Original language	English
Title of host publication	2009 International Semiconductor Device Research Symposium, ISDRS '09
DOIs	https://doi.org/10.1109/ISDRS.2009.5378189
State	Published - 2009
Event	2009 International Semiconductor Device Research Symposium, ISDRS '09 - College Park, MD, United States Duration: 9 Dec 2009 → 11 Dec 2009

Name	2009 International Semiconductor Device Research Symposium, ISDRS '09

Conference	2009 International Semiconductor Device Research Symposium, ISDRS '09
Country/Territory	United States
City	College Park, MD
Period	9/12/09 → 11/12/09

Access to Document

@inproceedings{8424881dd76245598040ae29610ebd21,

title = "Enhancement of erase speed using silicide drain in nanowire SONOS NAND flash memory",

author = "Wandong Kim and Park, \{Il Han\} and Seongjae Cho and Li, \{Dong Hua\} and Yun, \{Jang Gn\} and Park, \{Byung Gook\}",

year = "2009",

doi = "10.1109/ISDRS.2009.5378189",

language = "English",

isbn = "9781424460304",

series = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

booktitle = "2009 International Semiconductor Device Research Symposium, ISDRS '09",

note = "2009 International Semiconductor Device Research Symposium, ISDRS '09 ; Conference date: 09-12-2009 Through 11-12-2009",

}

Kim, W, Park, IH, Cho, S, Li, DH, Yun, JG & Park, BG 2009, Enhancement of erase speed using silicide drain in nanowire SONOS NAND flash memory. in 2009 International Semiconductor Device Research Symposium, ISDRS '09., 5378189, 2009 International Semiconductor Device Research Symposium, ISDRS '09, 2009 International Semiconductor Device Research Symposium, ISDRS '09, College Park, MD, United States, 9/12/09. https://doi.org/10.1109/ISDRS.2009.5378189

Enhancement of erase speed using silicide drain in nanowire SONOS NAND flash memory. / Kim, Wandong; Park, Il Han; Cho, Seongjae et al.
2009 International Semiconductor Device Research Symposium, ISDRS '09. 2009. 5378189 (2009 International Semiconductor Device Research Symposium, ISDRS '09).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Enhancement of erase speed using silicide drain in nanowire SONOS NAND flash memory

AU - Kim, Wandong

AU - Park, Il Han

AU - Cho, Seongjae

AU - Li, Dong Hua

AU - Yun, Jang Gn

AU - Park, Byung Gook

PY - 2009

Y1 - 2009

UR - https://www.scopus.com/pages/publications/77949410325

U2 - 10.1109/ISDRS.2009.5378189

DO - 10.1109/ISDRS.2009.5378189

M3 - Conference contribution

AN - SCOPUS:77949410325

SN - 9781424460304

T3 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

BT - 2009 International Semiconductor Device Research Symposium, ISDRS '09

T2 - 2009 International Semiconductor Device Research Symposium, ISDRS '09

Y2 - 9 December 2009 through 11 December 2009

ER -