Enhancement in positive bias stress stability of In-Ga-Zn-O thin-film transistors with vertically graded-oxygen-vacancy active layer

Yeong Gyu Kim; Seokhyun Yoon; Seonghwan Hong; Jong Sun Choi; Hyun Jae Kim

doi:10.1002/sdtp.10062

Enhancement in positive bias stress stability of In-Ga-Zn-O thin-film transistors with vertically graded-oxygen-vacancy active layer

Yeong Gyu Kim, Seokhyun Yoon, Seonghwan Hong, Jong Sun Choi, Hyun Jae Kim

Research output: Contribution to journal › Conference article › peer-review

1 Scopus citations

Abstract

To enhance the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs), we proposed a simple method to deposit the vertically graded-oxygen-vacancy active layer (VGA). The oxygen partial pressure was varied during deposition in order to fabricate VGA TFTs using sputtering. By adopting this method, we could control the concentration of oxygen vacancy in active layer according to the depth. The threshold voltage shift of optimized VGA TFTs was drastically improved under positive bias stress (PBS) condition compared with conventional ones.

Original language	English
Pages (from-to)	1209-1212
Number of pages	4
Journal	Digest of Technical Papers - SID International Symposium
Volume	46
Issue number	Book 3
DOIs	https://doi.org/10.1002/sdtp.10062
State	Published - 1 Jun 2015
Event	2015 SID International Symposium - San Jose, United States Duration: 4 Jun 2015 → …

Keywords

In-ga-zn-o
Oxide semiconductor
Oxygen vacancy
Positive bias stability
Thin-film transistors

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10.1002/sdtp.10062

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title = "Enhancement in positive bias stress stability of In-Ga-Zn-O thin-film transistors with vertically graded-oxygen-vacancy active layer",

abstract = "To enhance the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs), we proposed a simple method to deposit the vertically graded-oxygen-vacancy active layer (VGA). The oxygen partial pressure was varied during deposition in order to fabricate VGA TFTs using sputtering. By adopting this method, we could control the concentration of oxygen vacancy in active layer according to the depth. The threshold voltage shift of optimized VGA TFTs was drastically improved under positive bias stress (PBS) condition compared with conventional ones.",

keywords = "In-ga-zn-o, Oxide semiconductor, Oxygen vacancy, Positive bias stability, Thin-film transistors",

author = "Kim, {Yeong Gyu} and Seokhyun Yoon and Seonghwan Hong and Choi, {Jong Sun} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by Samsung Display and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819) Publisher Copyright: {\textcopyright} 2015 SID.; 2015 SID International Symposium ; Conference date: 04-06-2015",

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doi = "10.1002/sdtp.10062",

language = "English",

volume = "46",

pages = "1209--1212",

journal = "Digest of Technical Papers - SID International Symposium",

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Enhancement in positive bias stress stability of In-Ga-Zn-O thin-film transistors with vertically graded-oxygen-vacancy active layer. / Kim, Yeong Gyu; Yoon, Seokhyun; Hong, Seonghwan et al.
In: Digest of Technical Papers - SID International Symposium, Vol. 46, No. Book 3, 01.06.2015, p. 1209-1212.

Research output: Contribution to journal › Conference article › peer-review

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AU - Yoon, Seokhyun

AU - Hong, Seonghwan

AU - Choi, Jong Sun

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by Samsung Display and the National Research Foundation of Korea (NRF) grant funded by the Korea government (MSIP) (No. 2011-0028819) Publisher Copyright: © 2015 SID.

PY - 2015/6/1

Y1 - 2015/6/1

N2 - To enhance the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs), we proposed a simple method to deposit the vertically graded-oxygen-vacancy active layer (VGA). The oxygen partial pressure was varied during deposition in order to fabricate VGA TFTs using sputtering. By adopting this method, we could control the concentration of oxygen vacancy in active layer according to the depth. The threshold voltage shift of optimized VGA TFTs was drastically improved under positive bias stress (PBS) condition compared with conventional ones.

AB - To enhance the bias stability of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs), we proposed a simple method to deposit the vertically graded-oxygen-vacancy active layer (VGA). The oxygen partial pressure was varied during deposition in order to fabricate VGA TFTs using sputtering. By adopting this method, we could control the concentration of oxygen vacancy in active layer according to the depth. The threshold voltage shift of optimized VGA TFTs was drastically improved under positive bias stress (PBS) condition compared with conventional ones.

KW - In-ga-zn-o

KW - Oxide semiconductor

KW - Oxygen vacancy

KW - Positive bias stability

KW - Thin-film transistors

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JO - Digest of Technical Papers - SID International Symposium

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T2 - 2015 SID International Symposium

Y2 - 4 June 2015

ER -

Enhancement in positive bias stress stability of In-Ga-Zn-O thin-film transistors with vertically graded-oxygen-vacancy active layer

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Keywords

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