Enhanced exciton separation through negative energy band bending at grain boundaries of Cu2ZnSnSe4 thin-films

A. R. Jeong, W. Jo, S. Jung, J. Gwak, J. H. Yun

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Abstract

Local surface potential of Cu2ZnSnSe4 thin-films was investigated by Kelvin probe force microscopy. The surface potential profile across grain boundaries (GBs) shows a rise of 200-600 meV at GBs in a Cu-poor and Zn-poor film with 3.8 efficiency, which means positively charged GBs. In contrast, the GBs in a Cu-poor and Zn-rich film with 2 efficiency exhibit lowering of surface potential by 40 meV. The results indicate that GBs of Cu2ZnSnSe4 films play a role for exciton separation and governing defects for high efficiency could be not only CuZn but also VCu as explained theoretical predictions.

Original languageEnglish
Article number082103
JournalApplied Physics Letters
Volume99
Issue number8
DOIs
StatePublished - 22 Aug 2011

Bibliographical note

Funding Information:
This research was supported by a grant from the Fundamental R&D Program for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea (No. 10037233), by KRCF (Korea Research Council of Fundamental Science & Technology), and KIER (Korea Institute of Energy Research) for “NAP (National Agenda Project) program.” This work was supported in part by MEST and DGIST (10-BD-0101, Convergence Technology with New Renewable Energy and Intelligent Robot).

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