The anomalous behavior of nMOSFETs hot carrier reliability properties were examined at an elevated temperature. It was determined that deteriorations of saturation drain current and ring oscillator falling time were improved at high temperature. This deviant behavior caused a significant effect on the device reliability for future deep submicron devices at high operating temperatures.
|Number of pages||4|
|State||Published - 1994|
|Event||Proceedings of the 1994 International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, USA|
Duration: 16 Oct 1994 → 19 Oct 1994
|Conference||Proceedings of the 1994 International Integrated Reliability Workshop Final Report|
|City||Lake Tahoe, CA, USA|
|Period||16/10/94 → 19/10/94|