Enhanced degradation of nMOSFET's under hot carrier stress at elevated temperatures due to the length of velocity saturation region

Hyunsang Hwang; Jung Suk Goo; Hoyup Kwon; Hyungsoon Shin

Enhanced degradation of nMOSFET's under hot carrier stress at elevated temperatures due to the length of velocity saturation region

Hyunsang Hwang, Jung Suk Goo, Hoyup Kwon, Hyungsoon Shin

Electronic and Electrical Engineering

Research output: Contribution to conference › Paper › peer-review

Abstract

The anomalous behavior of nMOSFETs hot carrier reliability properties were examined at an elevated temperature. It was determined that deteriorations of saturation drain current and ring oscillator falling time were improved at high temperature. This deviant behavior caused a significant effect on the device reliability for future deep submicron devices at high operating temperatures.

Original language	English
Pages	69-72
Number of pages	4
State	Published - 1994
Event	Proceedings of the 1994 International Integrated Reliability Workshop Final Report - Lake Tahoe, CA, USA Duration: 16 Oct 1994 → 19 Oct 1994

Conference

Conference	Proceedings of the 1994 International Integrated Reliability Workshop Final Report
City	Lake Tahoe, CA, USA
Period	16/10/94 → 19/10/94

Cite this

@conference{c4496c2fb8534d07abea67364419d959,

title = "Enhanced degradation of nMOSFET's under hot carrier stress at elevated temperatures due to the length of velocity saturation region",

abstract = "The anomalous behavior of nMOSFETs hot carrier reliability properties were examined at an elevated temperature. It was determined that deteriorations of saturation drain current and ring oscillator falling time were improved at high temperature. This deviant behavior caused a significant effect on the device reliability for future deep submicron devices at high operating temperatures.",

author = "Hyunsang Hwang and Goo, {Jung Suk} and Hoyup Kwon and Hyungsoon Shin",

year = "1994",

language = "English",

pages = "69--72",

note = "Proceedings of the 1994 International Integrated Reliability Workshop Final Report ; Conference date: 16-10-1994 Through 19-10-1994",

}

Enhanced degradation of nMOSFET's under hot carrier stress at elevated temperatures due to the length of velocity saturation region. / Hwang, Hyunsang; Goo, Jung Suk; Kwon, Hoyup et al.
1994. 69-72 Paper presented at Proceedings of the 1994 International Integrated Reliability Workshop Final Report, Lake Tahoe, CA, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - Enhanced degradation of nMOSFET's under hot carrier stress at elevated temperatures due to the length of velocity saturation region

AU - Hwang, Hyunsang

AU - Goo, Jung Suk

AU - Kwon, Hoyup

AU - Shin, Hyungsoon

PY - 1994

Y1 - 1994

N2 - The anomalous behavior of nMOSFETs hot carrier reliability properties were examined at an elevated temperature. It was determined that deteriorations of saturation drain current and ring oscillator falling time were improved at high temperature. This deviant behavior caused a significant effect on the device reliability for future deep submicron devices at high operating temperatures.

AB - The anomalous behavior of nMOSFETs hot carrier reliability properties were examined at an elevated temperature. It was determined that deteriorations of saturation drain current and ring oscillator falling time were improved at high temperature. This deviant behavior caused a significant effect on the device reliability for future deep submicron devices at high operating temperatures.

UR - http://www.scopus.com/inward/record.url?scp=0028755964&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0028755964

SP - 69

EP - 72

T2 - Proceedings of the 1994 International Integrated Reliability Workshop Final Report

Y2 - 16 October 1994 through 19 October 1994

ER -

Enhanced degradation of nMOSFET's under hot carrier stress at elevated temperatures due to the length of velocity saturation region

Abstract

Conference

Fingerprint

Cite this