Engineering performance of barristors by varying the thickness of WS2

Doo Hua Choi; Jun Ho Lee; Hyun Cheol Kim; Han Byeol Lee; Nae Bong Jeoung; Do Hyun Park; Hakseong Kim; Sung Ho Jhang; Sang Wook Lee; Hyun Jong Chung

doi:10.1016/j.cap.2016.10.015

Engineering performance of barristors by varying the thickness of WS₂

Doo Hua Choi, Jun Ho Lee, Hyun Cheol Kim, Han Byeol Lee, Nae Bong Jeoung, Do Hyun Park, Hakseong Kim, Sung Ho Jhang, Sang Wook Lee, Hyun Jong Chung

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Abstract

We have investigated the performances of barristors with a graphene-tungsten disulfide (WS₂) junction by varying the thickness of WS₂ and gate oxide. On-current density (J_ON) and on- and off-current ratio (J_ON/J_OFF) increases, and sub-threshold swing (V_SS) decreases with the WS₂ thickness. Also, barristors with thicker WS₂ required less workfunction shift, to switch the barristors. Therefore, unlike the traditional devices, V_SS of barristor with gate dielectric 300 nm was smaller than that of 90 nm, when the former is fabricated with thicker WS₂ than the latter. Since materials properties of 2-dimensional semiconductors generally vary with their thickness, the thickness of 2D semiconductors could become a key parameter to engineer the performance of barristors with graphene and the 2D semiconductors.

Original language	English
Pages (from-to)	11-14
Number of pages	4
Journal	Current Applied Physics
Volume	17
Issue number	1
DOIs	https://doi.org/10.1016/j.cap.2016.10.015
State	Published - 1 Jan 2017

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V.

Keywords

Barristor
Graphene
Scaling law
Tungsten disulfide

Access to Document

10.1016/j.cap.2016.10.015

Cite this

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title = "Engineering performance of barristors by varying the thickness of WS2",

abstract = "We have investigated the performances of barristors with a graphene-tungsten disulfide (WS2) junction by varying the thickness of WS2 and gate oxide. On-current density (JON) and on- and off-current ratio (JON/JOFF) increases, and sub-threshold swing (VSS) decreases with the WS2 thickness. Also, barristors with thicker WS2 required less workfunction shift, to switch the barristors. Therefore, unlike the traditional devices, VSS of barristor with gate dielectric 300 nm was smaller than that of 90 nm, when the former is fabricated with thicker WS2 than the latter. Since materials properties of 2-dimensional semiconductors generally vary with their thickness, the thickness of 2D semiconductors could become a key parameter to engineer the performance of barristors with graphene and the 2D semiconductors.",

keywords = "Barristor, Graphene, Scaling law, Tungsten disulfide",

author = "Choi, {Doo Hua} and Lee, {Jun Ho} and Kim, {Hyun Cheol} and Lee, {Han Byeol} and Jeoung, {Nae Bong} and Park, {Do Hyun} and Hakseong Kim and Jhang, {Sung Ho} and Lee, {Sang Wook} and Chung, {Hyun Jong}",

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AU - Choi, Doo Hua

AU - Lee, Jun Ho

AU - Kim, Hyun Cheol

AU - Lee, Han Byeol

AU - Jeoung, Nae Bong

AU - Park, Do Hyun

AU - Kim, Hakseong

AU - Jhang, Sung Ho

AU - Lee, Sang Wook

AU - Chung, Hyun Jong

PY - 2017/1/1

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AB - We have investigated the performances of barristors with a graphene-tungsten disulfide (WS2) junction by varying the thickness of WS2 and gate oxide. On-current density (JON) and on- and off-current ratio (JON/JOFF) increases, and sub-threshold swing (VSS) decreases with the WS2 thickness. Also, barristors with thicker WS2 required less workfunction shift, to switch the barristors. Therefore, unlike the traditional devices, VSS of barristor with gate dielectric 300 nm was smaller than that of 90 nm, when the former is fabricated with thicker WS2 than the latter. Since materials properties of 2-dimensional semiconductors generally vary with their thickness, the thickness of 2D semiconductors could become a key parameter to engineer the performance of barristors with graphene and the 2D semiconductors.

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