Engineering performance of barristors by varying the thickness of WS2

Doo Hua Choi, Jun Ho Lee, Hyun Cheol Kim, Han Byeol Lee, Nae Bong Jeoung, Do Hyun Park, Hakseong Kim, Sung Ho Jhang, Sang Wook Lee, Hyun Jong Chung

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


We have investigated the performances of barristors with a graphene-tungsten disulfide (WS2) junction by varying the thickness of WS2 and gate oxide. On-current density (JON) and on- and off-current ratio (JON/JOFF) increases, and sub-threshold swing (VSS) decreases with the WS2 thickness. Also, barristors with thicker WS2 required less workfunction shift, to switch the barristors. Therefore, unlike the traditional devices, VSS of barristor with gate dielectric 300 nm was smaller than that of 90 nm, when the former is fabricated with thicker WS2 than the latter. Since materials properties of 2-dimensional semiconductors generally vary with their thickness, the thickness of 2D semiconductors could become a key parameter to engineer the performance of barristors with graphene and the 2D semiconductors.

Original languageEnglish
Pages (from-to)11-14
Number of pages4
JournalCurrent Applied Physics
Issue number1
StatePublished - 1 Jan 2017

Bibliographical note

Publisher Copyright:
© 2016 Elsevier B.V.


  • Barristor
  • Graphene
  • Scaling law
  • Tungsten disulfide


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