@inproceedings{54153652bd5d4388b8fd0013f4be5c86,
title = "Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM",
abstract = "A novel fusion memory is proposed as a new paradigm of silicon based memory technology. An O/N/O gate dielectric and a floating body are combined with a FinFET, and the non-volatile memory (NVM) and high speed capacitorless 1T-DRAM are performed in a single transistor. A nitride trap layer is used as an electron storage node for NVM, and hetero-epitaxially grown Si/Si 1-xGex energy band engineered bulk substrates allow excess hole storage for 1T-DRAM. Highly reliable 1T-DRAM and NVM are demonstrated.",
author = "Han, \{Jin Woo\} and Ryu, \{Seong Wan\} and Sungho Kim and Kim, \{Chung Jin\} and Ahn, \{Jae Hyuk\} and Choi, \{Sung Jin\} and Choi, \{Kyu Jin\} and Cho, \{Byung Jin\} and Kim, \{Jin Soo\} and Kim, \{Kwang Hee\} and Lee, \{Gi Sung\} and Oh, \{Jae Sub\} and Song, \{Myong Ho\} and Park, \{Yun Chang\} and Kim, \{Jeoung Woo\} and Choi, \{Yang Kyu\}",
year = "2008",
doi = "10.1109/IEDM.2008.4796658",
language = "English",
isbn = "9781424423781",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",
note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",
}