Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

Jin-Woo Han; Seong-Wan Ryu; Chung-Jin Kim; Sung-Jin Choi; Sungho Kim; Jae-Hyuk Ahn; Dong-Hyun Kim; Kyu Jin Choi; Byung Jin Cho; Jin-Soo Kim

Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

Jin-Woo Han, Seong-Wan Ryu, Chung-Jin Kim, Sung-Jin Choi, Sungho Kim, Jae-Hyuk Ahn, Dong-Hyun Kim, Kyu Jin Choi, Byung Jin Cho, Jin-Soo Kim

Research output: Contribution to journal › Article › peer-review

Original language	Undefined/Unknown
Pages (from-to)	641-647
Number of pages	7
Journal	IEEE Transactions on Electron Devices
Volume	56
Issue number	4
State	Published - 2009

Cite this

@article{12bb7e75b715405193ea05d6eceb378f,

title = "Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM",

author = "Jin-Woo Han and Seong-Wan Ryu and Chung-Jin Kim and Sung-Jin Choi and Sungho Kim and Jae-Hyuk Ahn and Dong-Hyun Kim and Choi, {Kyu Jin} and Cho, {Byung Jin} and Jin-Soo Kim",

year = "2009",

language = "Undefined/Unknown",

volume = "56",

pages = "641--647",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

AU - Han, Jin-Woo

AU - Ryu, Seong-Wan

AU - Kim, Chung-Jin

AU - Choi, Sung-Jin

AU - Kim, Sungho

AU - Ahn, Jae-Hyuk

AU - Kim, Dong-Hyun

AU - Choi, Kyu Jin

AU - Cho, Byung Jin

AU - Kim, Jin-Soo

PY - 2009

Y1 - 2009

M3 - Article

SN - 0018-9383

VL - 56

SP - 641

EP - 647

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 4

ER -