Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

Jin Woo Han; Seong Wan Ryu; Sungho Kim; Chung Jin Kim; Jae Hyuk Ahn; Sung Jin Choi; Kyu Jin Choi; Byung Jin Cho; Jin Soo Kim; Kwang Hee Kim; Gi Sung Lee; Jae Sub Oh; Myong Ho Song; Yun Chang Park; Jeoung Woo Kim; Yang Kyu Choi

doi:10.1109/IEDM.2008.4796658

Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

Jin Woo Han, Seong Wan Ryu, Sungho Kim, Chung Jin Kim, Jae Hyuk Ahn, Sung Jin Choi, Kyu Jin Choi, Byung Jin Cho, Jin Soo Kim, Kwang Hee Kim, Gi Sung Lee, Jae Sub Oh, Myong Ho Song, Yun Chang Park, Jeoung Woo Kim, Yang Kyu Choi

Semiconductor Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

17 Scopus citations

Abstract

A novel fusion memory is proposed as a new paradigm of silicon based memory technology. An O/N/O gate dielectric and a floating body are combined with a FinFET, and the non-volatile memory (NVM) and high speed capacitorless 1T-DRAM are performed in a single transistor. A nitride trap layer is used as an electron storage node for NVM, and hetero-epitaxially grown Si/Si _1-xGe_x energy band engineered bulk substrates allow excess hole storage for 1T-DRAM. Highly reliable 1T-DRAM and NVM are demonstrated.

Original language	English
Title of host publication	2008 IEEE International Electron Devices Meeting, IEDM 2008
DOIs	https://doi.org/10.1109/IEDM.2008.4796658
State	Published - 2008
Event	2008 IEEE International Electron Devices Meeting, IEDM 2008 - San Francisco, CA, United States Duration: 15 Dec 2008 → 17 Dec 2008

Publication series

Name	Technical Digest - International Electron Devices Meeting, IEDM
ISSN (Print)	0163-1918

Conference

Conference	2008 IEEE International Electron Devices Meeting, IEDM 2008
Country/Territory	United States
City	San Francisco, CA
Period	15/12/08 → 17/12/08

Access to Document

10.1109/IEDM.2008.4796658

Cite this

Han, J. W., Ryu, S. W., Kim, S., Kim, C. J., Ahn, J. H., Choi, S. J., Choi, K. J., Cho, B. J., Kim, J. S., Kim, K. H., Lee, G. S., Oh, J. S., Song, M. H., Park, Y. C., Kim, J. W., & Choi, Y. K. (2008). Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM. In 2008 IEEE International Electron Devices Meeting, IEDM 2008 Article 4796658 (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2008.4796658

@inproceedings{54153652bd5d4388b8fd0013f4be5c86,

title = "Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM",

abstract = "A novel fusion memory is proposed as a new paradigm of silicon based memory technology. An O/N/O gate dielectric and a floating body are combined with a FinFET, and the non-volatile memory (NVM) and high speed capacitorless 1T-DRAM are performed in a single transistor. A nitride trap layer is used as an electron storage node for NVM, and hetero-epitaxially grown Si/Si 1-xGex energy band engineered bulk substrates allow excess hole storage for 1T-DRAM. Highly reliable 1T-DRAM and NVM are demonstrated.",

author = "Han, {Jin Woo} and Ryu, {Seong Wan} and Sungho Kim and Kim, {Chung Jin} and Ahn, {Jae Hyuk} and Choi, {Sung Jin} and Choi, {Kyu Jin} and Cho, {Byung Jin} and Kim, {Jin Soo} and Kim, {Kwang Hee} and Lee, {Gi Sung} and Oh, {Jae Sub} and Song, {Myong Ho} and Park, {Yun Chang} and Kim, {Jeoung Woo} and Choi, {Yang Kyu}",

year = "2008",

doi = "10.1109/IEDM.2008.4796658",

language = "English",

isbn = "9781424423781",

series = "Technical Digest - International Electron Devices Meeting, IEDM",

booktitle = "2008 IEEE International Electron Devices Meeting, IEDM 2008",

note = "2008 IEEE International Electron Devices Meeting, IEDM 2008 ; Conference date: 15-12-2008 Through 17-12-2008",

}

Han, JW, Ryu, SW, Kim, S, Kim, CJ, Ahn, JH, Choi, SJ, Choi, KJ, Cho, BJ, Kim, JS, Kim, KH, Lee, GS, Oh, JS, Song, MH, Park, YC, Kim, JW & Choi, YK 2008, Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM. in 2008 IEEE International Electron Devices Meeting, IEDM 2008., 4796658, Technical Digest - International Electron Devices Meeting, IEDM, 2008 IEEE International Electron Devices Meeting, IEDM 2008, San Francisco, CA, United States, 15/12/08. https://doi.org/10.1109/IEDM.2008.4796658

Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM. / Han, Jin Woo; Ryu, Seong Wan; Kim, Sungho et al.
2008 IEEE International Electron Devices Meeting, IEDM 2008. 2008. 4796658 (Technical Digest - International Electron Devices Meeting, IEDM).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

AU - Han, Jin Woo

AU - Ryu, Seong Wan

AU - Kim, Sungho

AU - Kim, Chung Jin

AU - Ahn, Jae Hyuk

AU - Choi, Sung Jin

AU - Choi, Kyu Jin

AU - Cho, Byung Jin

AU - Kim, Jin Soo

AU - Kim, Kwang Hee

AU - Lee, Gi Sung

AU - Oh, Jae Sub

AU - Song, Myong Ho

AU - Park, Yun Chang

AU - Kim, Jeoung Woo

AU - Choi, Yang Kyu

PY - 2008

Y1 - 2008

N2 - A novel fusion memory is proposed as a new paradigm of silicon based memory technology. An O/N/O gate dielectric and a floating body are combined with a FinFET, and the non-volatile memory (NVM) and high speed capacitorless 1T-DRAM are performed in a single transistor. A nitride trap layer is used as an electron storage node for NVM, and hetero-epitaxially grown Si/Si 1-xGex energy band engineered bulk substrates allow excess hole storage for 1T-DRAM. Highly reliable 1T-DRAM and NVM are demonstrated.

AB - A novel fusion memory is proposed as a new paradigm of silicon based memory technology. An O/N/O gate dielectric and a floating body are combined with a FinFET, and the non-volatile memory (NVM) and high speed capacitorless 1T-DRAM are performed in a single transistor. A nitride trap layer is used as an electron storage node for NVM, and hetero-epitaxially grown Si/Si 1-xGex energy band engineered bulk substrates allow excess hole storage for 1T-DRAM. Highly reliable 1T-DRAM and NVM are demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=64549145387&partnerID=8YFLogxK

U2 - 10.1109/IEDM.2008.4796658

DO - 10.1109/IEDM.2008.4796658

M3 - Conference contribution

AN - SCOPUS:64549145387

SN - 9781424423781

T3 - Technical Digest - International Electron Devices Meeting, IEDM

BT - 2008 IEEE International Electron Devices Meeting, IEDM 2008

T2 - 2008 IEEE International Electron Devices Meeting, IEDM 2008

Y2 - 15 December 2008 through 17 December 2008

ER -

Energy band engineered unified-RAM (URAM) for multi-functioning 1T-DRAM and NVM

Abstract

Publication series

Conference

Access to Document

Fingerprint

Cite this