TY - JOUR
T1 - Electronic transport and consequences for material removal in ultrafast pulsed laser ablation of materials
AU - Bulgakova, N. M.
AU - Stoian, R.
AU - Rosenfeld, A.
AU - Hertel, I. V.
AU - Campbell, E. E.B.
PY - 2004/2/9
Y1 - 2004/2/9
N2 - Fast electronic transport is investigated theoretically based on a drift-diffusion approach for different classes of materials (metals, semiconductors, and dielectrics) under ultrafast, pulsed laser irradiation. The simulations are performed at intensities above the material removal threshold, characteristic for the ablation regime. The laser-induced charging of dielectric surfaces causes a subpicosecond electrostatic rupture of the superficial layers, an effect which, in comparison, is strongly inhibited for metals and semiconductors as a consequence of superior carrier transport properties.
AB - Fast electronic transport is investigated theoretically based on a drift-diffusion approach for different classes of materials (metals, semiconductors, and dielectrics) under ultrafast, pulsed laser irradiation. The simulations are performed at intensities above the material removal threshold, characteristic for the ablation regime. The laser-induced charging of dielectric surfaces causes a subpicosecond electrostatic rupture of the superficial layers, an effect which, in comparison, is strongly inhibited for metals and semiconductors as a consequence of superior carrier transport properties.
UR - http://www.scopus.com/inward/record.url?scp=1642284488&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.69.054102
DO - 10.1103/PhysRevB.69.054102
M3 - Article
AN - SCOPUS:1642284488
SN - 1098-0121
VL - 69
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 5
ER -