Electronic transport and consequences for material removal in ultrafast pulsed laser ablation of materials

N. M. Bulgakova, R. Stoian, A. Rosenfeld, I. V. Hertel, E. E.B. Campbell

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189 Scopus citations

Abstract

Fast electronic transport is investigated theoretically based on a drift-diffusion approach for different classes of materials (metals, semiconductors, and dielectrics) under ultrafast, pulsed laser irradiation. The simulations are performed at intensities above the material removal threshold, characteristic for the ablation regime. The laser-induced charging of dielectric surfaces causes a subpicosecond electrostatic rupture of the superficial layers, an effect which, in comparison, is strongly inhibited for metals and semiconductors as a consequence of superior carrier transport properties.

Original languageEnglish
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume69
Issue number5
DOIs
StatePublished - 9 Feb 2004

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