Electronic structure of the NiOx film fabricated by using a thermal oxidation technique

Y. K. Seo; D. J. Lee; Y. S. Lee; W. S. Choi; D. W. Kim

doi:10.3938/jkps.55.129

Electronic structure of the NiO_x film fabricated by using a thermal oxidation technique

Y. K. Seo, D. J. Lee, Y. S. Lee, W. S. Choi, D. W. Kim

Department of Physics

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

We investigated the electronic properties of thermally-oxidized Ni films, which have recently attracted much attention due to their good resistive switching behaviors. We found that the XRD patterns and the optical responses of the oxidized Ni films exhibited systematic changes with oxidation degree. The optical response of the NiO films appeared to be consistent with those characteristic of doped Mott insulators. We also discuss the possibility of phase coexistence.

Original language	English
Pages (from-to)	129-133
Number of pages	5
Journal	Journal of the Korean Physical Society
Volume	55
Issue number	1
DOIs	https://doi.org/10.3938/jkps.55.129
State	Published - Jul 2009

Keywords

Electronic structure
NiO
Optical spectroscopy
ReRAM

Access to Document

10.3938/jkps.55.129

Cite this

@article{3f81002220804732bc61a40dea2255e7,

title = "Electronic structure of the NiOx film fabricated by using a thermal oxidation technique",

abstract = "We investigated the electronic properties of thermally-oxidized Ni films, which have recently attracted much attention due to their good resistive switching behaviors. We found that the XRD patterns and the optical responses of the oxidized Ni films exhibited systematic changes with oxidation degree. The optical response of the NiO films appeared to be consistent with those characteristic of doped Mott insulators. We also discuss the possibility of phase coexistence.",

keywords = "Electronic structure, NiO, Optical spectroscopy, ReRAM",

author = "Seo, {Y. K.} and Lee, {D. J.} and Lee, {Y. S.} and Choi, {W. S.} and Kim, {D. W.}",

year = "2009",

month = jul,

doi = "10.3938/jkps.55.129",

language = "English",

volume = "55",

pages = "129--133",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "1",

}

TY - JOUR

T1 - Electronic structure of the NiOx film fabricated by using a thermal oxidation technique

AU - Seo, Y. K.

AU - Lee, D. J.

AU - Lee, Y. S.

AU - Choi, W. S.

AU - Kim, D. W.

PY - 2009/7

Y1 - 2009/7

N2 - We investigated the electronic properties of thermally-oxidized Ni films, which have recently attracted much attention due to their good resistive switching behaviors. We found that the XRD patterns and the optical responses of the oxidized Ni films exhibited systematic changes with oxidation degree. The optical response of the NiO films appeared to be consistent with those characteristic of doped Mott insulators. We also discuss the possibility of phase coexistence.

AB - We investigated the electronic properties of thermally-oxidized Ni films, which have recently attracted much attention due to their good resistive switching behaviors. We found that the XRD patterns and the optical responses of the oxidized Ni films exhibited systematic changes with oxidation degree. The optical response of the NiO films appeared to be consistent with those characteristic of doped Mott insulators. We also discuss the possibility of phase coexistence.

KW - Electronic structure

KW - NiO

KW - Optical spectroscopy

KW - ReRAM

UR - http://www.scopus.com/inward/record.url?scp=69249187752&partnerID=8YFLogxK

U2 - 10.3938/jkps.55.129

DO - 10.3938/jkps.55.129

M3 - Article

AN - SCOPUS:69249187752

SN - 0374-4884

VL - 55

SP - 129

EP - 133

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

IS - 1

ER -