Electronic structure of amorphous InGaO3(ZnO)0.5 thin films

Deok Yong Cho; Jaewon Song; Cheol Seong Hwang; Woo Seok Choi; T. W. Noh; J. Y. Kim; H. G. Lee; B. G. Park; S. Y. Cho; S. J. Oh; Jong Han Jeong; Jae Kyeong Jeong; Yeon Gon Mo

doi:10.1016/j.tsf.2009.01.156

Electronic structure of amorphous InGaO₃(ZnO)_0.5 thin films

Deok Yong Cho, Jaewon Song, Cheol Seong Hwang, Woo Seok Choi, T. W. Noh, J. Y. Kim, H. G. Lee, B. G. Park, S. Y. Cho, S. J. Oh, Jong Han Jeong, Jae Kyeong Jeong, Yeon Gon Mo

Department of Chemical Engineering & Materials Science

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

The electronic structure of amorphous semiconductor InGaO₃(ZnO)_0.5 thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga₂O₃, In₂O₃, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure.

Original language	English
Pages (from-to)	1079-1081
Number of pages	3
Journal	Thin Solid Films
Volume	518
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2009.01.156
State	Published - 15 Dec 2009

Bibliographical note

Funding Information:
This study was supported by the SSDIP program of SNU, and the experiments at the PLS were supported in part by MEST and POSTECH.

Keywords

InGaZnO
Transparent conducting oxide
X-ray absorption spectroscopy
X-ray photoelectron spectroscopy

Access to Document

10.1016/j.tsf.2009.01.156

Cite this

@article{aeb9cceea77c4517b95345c055ac254c,

title = "Electronic structure of amorphous InGaO3(ZnO)0.5 thin films",

abstract = "The electronic structure of amorphous semiconductor InGaO3(ZnO)0.5 thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga2O3, In2O3, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure.",

keywords = "InGaZnO, Transparent conducting oxide, X-ray absorption spectroscopy, X-ray photoelectron spectroscopy",

author = "Cho, {Deok Yong} and Jaewon Song and Hwang, {Cheol Seong} and Choi, {Woo Seok} and Noh, {T. W.} and Kim, {J. Y.} and Lee, {H. G.} and Park, {B. G.} and Cho, {S. Y.} and Oh, {S. J.} and Jeong, {Jong Han} and Jeong, {Jae Kyeong} and Mo, {Yeon Gon}",

note = "Funding Information: This study was supported by the SSDIP program of SNU, and the experiments at the PLS were supported in part by MEST and POSTECH. ",

year = "2009",

month = dec,

day = "15",

doi = "10.1016/j.tsf.2009.01.156",

language = "English",

volume = "518",

pages = "1079--1081",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "4",

}

TY - JOUR

T1 - Electronic structure of amorphous InGaO3(ZnO)0.5 thin films

AU - Cho, Deok Yong

AU - Song, Jaewon

AU - Hwang, Cheol Seong

AU - Choi, Woo Seok

AU - Noh, T. W.

AU - Kim, J. Y.

AU - Lee, H. G.

AU - Park, B. G.

AU - Cho, S. Y.

AU - Oh, S. J.

AU - Jeong, Jong Han

AU - Jeong, Jae Kyeong

AU - Mo, Yeon Gon

N1 - Funding Information: This study was supported by the SSDIP program of SNU, and the experiments at the PLS were supported in part by MEST and POSTECH.

PY - 2009/12/15

Y1 - 2009/12/15

N2 - The electronic structure of amorphous semiconductor InGaO3(ZnO)0.5 thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga2O3, In2O3, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure.

AB - The electronic structure of amorphous semiconductor InGaO3(ZnO)0.5 thin films, which were deposited by radio-frequency magnetron sputtering process, was investigated using X-ray photoelectron spectroscopy and O K-edge X-ray absorption spectroscopy. The overall features of the valence and conduction bands were analyzed by comparing with the spectra of Ga2O3, In2O3, and ZnO films. The valence and conduction band edges are mainly composed of O 2p and In 5sp states, respectively. The bandgap of the films determined by spectroscopic ellipsometry was approximately 3.2 eV. Further, it is found that the introduction of oxygen gas during the sputter-deposition does not induce significant variations in the chemical states and band structure.

KW - InGaZnO

KW - Transparent conducting oxide

KW - X-ray absorption spectroscopy

KW - X-ray photoelectron spectroscopy

UR - http://www.scopus.com/inward/record.url?scp=71649105231&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2009.01.156

DO - 10.1016/j.tsf.2009.01.156

M3 - Article

AN - SCOPUS:71649105231

SN - 0040-6090

VL - 518

SP - 1079

EP - 1081

JO - Thin Solid Films

JF - Thin Solid Films

IS - 4

ER -