Electronic properties of thin films sublimed from La@82 and Li@60

V. N. Popok; A. V. Gromov; M. Jönsson; A. Taninaka; H. Shinohara; E. E.B. Campbell

doi:10.1142/S1793292008000988

Electronic properties of thin films sublimed from La@₈₂ and Li@₆₀

V. N. Popok, A. V. Gromov, M. Jönsson, A. Taninaka, H. Shinohara, E. E.B. Campbell

Department of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

La@₈₂ and Li@₆₀ thin films obtained by sublimation in vacuum are studied using four-probe current - voltage measurements and atomic force microscopy. In situ electrical measurements show semiconducting behavior of both films with room-temperature resistivity of 21 ± 8 and 1230 ± 50 Ω · cm for the La@₈₂ and Li@₆₀, respectively. A variable range hopping mechanism of conductance is suggested from the temperature dependences of resistance. The activation energies for electron transport are calculated for both metallofullerenes. Irreversible changes to the Li@₆₀ film structure increasing the film resistivity to values typical for C₆₀ are found at elevated temperatures. The effect of exposure to ambient atmosphere on the conductance of the films is discussed.

Original language	English
Pages (from-to)	155-160
Number of pages	6
Journal	Nano
Volume	3
Issue number	3
DOIs	https://doi.org/10.1142/S1793292008000988
State	Published - 2008

Keywords

Atomic force microscopy
Electronic transport
Endohedral metallofullerenes

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10.1142/S1793292008000988

Cite this

@article{3487a07d6f8e47b49abc194721358e6d,

title = "Electronic properties of thin films sublimed from La@82 and Li@60",

abstract = "La@82 and Li@60 thin films obtained by sublimation in vacuum are studied using four-probe current - voltage measurements and atomic force microscopy. In situ electrical measurements show semiconducting behavior of both films with room-temperature resistivity of 21 ± 8 and 1230 ± 50 Ω · cm for the La@82 and Li@60, respectively. A variable range hopping mechanism of conductance is suggested from the temperature dependences of resistance. The activation energies for electron transport are calculated for both metallofullerenes. Irreversible changes to the Li@60 film structure increasing the film resistivity to values typical for C60 are found at elevated temperatures. The effect of exposure to ambient atmosphere on the conductance of the films is discussed.",

keywords = "Atomic force microscopy, Electronic transport, Endohedral metallofullerenes",

author = "Popok, {V. N.} and Gromov, {A. V.} and M. J{\"o}nsson and A. Taninaka and H. Shinohara and Campbell, {E. E.B.}",

year = "2008",

doi = "10.1142/S1793292008000988",

language = "English",

volume = "3",

pages = "155--160",

journal = "Nano",

issn = "1793-2920",

publisher = "World Scientific Publishing Co. Pte Ltd",

number = "3",

}

TY - JOUR

T1 - Electronic properties of thin films sublimed from La@82 and Li@60

AU - Popok, V. N.

AU - Gromov, A. V.

AU - Jönsson, M.

AU - Taninaka, A.

AU - Shinohara, H.

AU - Campbell, E. E.B.

PY - 2008

Y1 - 2008

N2 - La@82 and Li@60 thin films obtained by sublimation in vacuum are studied using four-probe current - voltage measurements and atomic force microscopy. In situ electrical measurements show semiconducting behavior of both films with room-temperature resistivity of 21 ± 8 and 1230 ± 50 Ω · cm for the La@82 and Li@60, respectively. A variable range hopping mechanism of conductance is suggested from the temperature dependences of resistance. The activation energies for electron transport are calculated for both metallofullerenes. Irreversible changes to the Li@60 film structure increasing the film resistivity to values typical for C60 are found at elevated temperatures. The effect of exposure to ambient atmosphere on the conductance of the films is discussed.

AB - La@82 and Li@60 thin films obtained by sublimation in vacuum are studied using four-probe current - voltage measurements and atomic force microscopy. In situ electrical measurements show semiconducting behavior of both films with room-temperature resistivity of 21 ± 8 and 1230 ± 50 Ω · cm for the La@82 and Li@60, respectively. A variable range hopping mechanism of conductance is suggested from the temperature dependences of resistance. The activation energies for electron transport are calculated for both metallofullerenes. Irreversible changes to the Li@60 film structure increasing the film resistivity to values typical for C60 are found at elevated temperatures. The effect of exposure to ambient atmosphere on the conductance of the films is discussed.

KW - Atomic force microscopy

KW - Electronic transport

KW - Endohedral metallofullerenes

UR - http://www.scopus.com/inward/record.url?scp=56349083712&partnerID=8YFLogxK

U2 - 10.1142/S1793292008000988

DO - 10.1142/S1793292008000988

M3 - Article

AN - SCOPUS:56349083712

SN - 1793-2920

VL - 3

SP - 155

EP - 160

JO - Nano

JF - Nano

IS - 3