TY - JOUR
T1 - Electron irradiance of conductive sidewalls
T2 - A determining factor for pattern-dependent charging
AU - Hwang, Gyeong S.
AU - Giapis, Konstantinos P.
PY - 1997
Y1 - 1997
N2 - Numerical simulations of charging and profile evolution during gate electrode overetching in high density plasmas have been performed to investigate the effect of long conductive sidewalls on profile distortion (notching). The results reveal that the angle of electron irradiance of the conductive portion of the sidewalls affects profoundly the charging potential of the gates. Larger angles, obtained for thinner masks and/or thicker polysilicon, result in reduced gate potentials which, through their influence on the local ion dynamics, cause more severe notching at all lines of the microstructure.
AB - Numerical simulations of charging and profile evolution during gate electrode overetching in high density plasmas have been performed to investigate the effect of long conductive sidewalls on profile distortion (notching). The results reveal that the angle of electron irradiance of the conductive portion of the sidewalls affects profoundly the charging potential of the gates. Larger angles, obtained for thinner masks and/or thicker polysilicon, result in reduced gate potentials which, through their influence on the local ion dynamics, cause more severe notching at all lines of the microstructure.
UR - http://www.scopus.com/inward/record.url?scp=5344219587&partnerID=8YFLogxK
U2 - 10.1116/1.589364
DO - 10.1116/1.589364
M3 - Article
AN - SCOPUS:5344219587
SN - 1071-1023
VL - 15
SP - 1741
EP - 1746
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 5
ER -