Abstract
The direct spontaneous grafting of 4-nitrophenyl molecules onto n-doped hydrogenated amorphous silicon (a-Si:H) surfaces without external ultraviolet, thermal, or electrochemical energy was investigated. Clean n-doped a-Si:H thin films were dipped in a solution of 4-nitrobenzenediazonium salts (PNBD) in acetonitrile. After the modified surfaces were rinsed, they were analyzed qualitatively and quantitatively by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). XPS and AFM results show that the reaction of an n-doped a-Si:H thin film with PNBD self-terminates without polymerization after 5 h, and the surface number density of 4-nitrophenyl molecules is 4.2×1015/cm2. These results demonstrate that the spontaneous grafting of nitrophenyl layers onto n-doped a-Si:H thin films is an attractive pathway toward forming interfaces between a-Si:H and organic layers under ambient conditions.
Original language | English |
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Pages (from-to) | 6309-6313 |
Number of pages | 5 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 14 |
Issue number | 8 |
DOIs | |
State | Published - Aug 2014 |
Keywords
- Amorphous silicon surface
- Organic monolayer
- Spontaneous reaction
- XPS