Electroless chemical grafting of nitrophenyl groups on n-doped hydrogenated amorphous silicon surfaces

Chulki Kim, Kiwon Oh, Seunghee Han, Kyungkon Kim, Il Won Kim, Heesuk Kim

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The direct spontaneous grafting of 4-nitrophenyl molecules onto n-doped hydrogenated amorphous silicon (a-Si:H) surfaces without external ultraviolet, thermal, or electrochemical energy was investigated. Clean n-doped a-Si:H thin films were dipped in a solution of 4-nitrobenzenediazonium salts (PNBD) in acetonitrile. After the modified surfaces were rinsed, they were analyzed qualitatively and quantitatively by X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). XPS and AFM results show that the reaction of an n-doped a-Si:H thin film with PNBD self-terminates without polymerization after 5 h, and the surface number density of 4-nitrophenyl molecules is 4.2×1015/cm2. These results demonstrate that the spontaneous grafting of nitrophenyl layers onto n-doped a-Si:H thin films is an attractive pathway toward forming interfaces between a-Si:H and organic layers under ambient conditions.

Original languageEnglish
Pages (from-to)6309-6313
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume14
Issue number8
DOIs
StatePublished - Aug 2014

Keywords

  • Amorphous silicon surface
  • Organic monolayer
  • Spontaneous reaction
  • XPS

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