Electrode-dependent electrical properties of metal/Nb-doped SrTi O3 junctions

C. Park; Y. Seo; J. Jung; D. W. Kim

doi:10.1063/1.2872707

Electrode-dependent electrical properties of metal/Nb-doped SrTi O3 junctions

C. Park, Y. Seo, J. Jung, D. W. Kim

Department of Physics

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114 Scopus citations

Abstract

In this study, we discuss the electrical properties of junctions consisting of metal electrodes and Nb-doped SrTi O3 (001) single crystals. The junctions formed with large work function metals (Ni, Au, Pd, and Pt) resulted in rectifying transport. A hysteretic feature was observed in the current (I) -voltage (V) and capacitance (C) -V characteristics of these junctions upon polarity reversal. The ideal Schottky-Mott rule could not explain the barrier height obtained from the I-V data, indicating the existence of interface states. Analyses of the C-V data revealed that a low dielectric constant layer existed at the interface. The interface states and layers affected the transport and the related resistance switching characteristics of the junctions.

Original language	English
Article number	054106
Journal	Journal of Applied Physics
Volume	103
Issue number	5
DOIs	https://doi.org/10.1063/1.2872707
State	Published - 2008

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-331-C00083).

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title = "Electrode-dependent electrical properties of metal/Nb-doped SrTi O3 junctions",

abstract = "In this study, we discuss the electrical properties of junctions consisting of metal electrodes and Nb-doped SrTi O3 (001) single crystals. The junctions formed with large work function metals (Ni, Au, Pd, and Pt) resulted in rectifying transport. A hysteretic feature was observed in the current (I) -voltage (V) and capacitance (C) -V characteristics of these junctions upon polarity reversal. The ideal Schottky-Mott rule could not explain the barrier height obtained from the I-V data, indicating the existence of interface states. Analyses of the C-V data revealed that a low dielectric constant layer existed at the interface. The interface states and layers affected the transport and the related resistance switching characteristics of the junctions.",

author = "C. Park and Y. Seo and J. Jung and Kim, {D. W.}",

note = "Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-331-C00083).",

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T1 - Electrode-dependent electrical properties of metal/Nb-doped SrTi O3 junctions

AU - Park, C.

AU - Seo, Y.

AU - Jung, J.

AU - Kim, D. W.

N1 - Funding Information: This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-331-C00083).

PY - 2008

Y1 - 2008

N2 - In this study, we discuss the electrical properties of junctions consisting of metal electrodes and Nb-doped SrTi O3 (001) single crystals. The junctions formed with large work function metals (Ni, Au, Pd, and Pt) resulted in rectifying transport. A hysteretic feature was observed in the current (I) -voltage (V) and capacitance (C) -V characteristics of these junctions upon polarity reversal. The ideal Schottky-Mott rule could not explain the barrier height obtained from the I-V data, indicating the existence of interface states. Analyses of the C-V data revealed that a low dielectric constant layer existed at the interface. The interface states and layers affected the transport and the related resistance switching characteristics of the junctions.

AB - In this study, we discuss the electrical properties of junctions consisting of metal electrodes and Nb-doped SrTi O3 (001) single crystals. The junctions formed with large work function metals (Ni, Au, Pd, and Pt) resulted in rectifying transport. A hysteretic feature was observed in the current (I) -voltage (V) and capacitance (C) -V characteristics of these junctions upon polarity reversal. The ideal Schottky-Mott rule could not explain the barrier height obtained from the I-V data, indicating the existence of interface states. Analyses of the C-V data revealed that a low dielectric constant layer existed at the interface. The interface states and layers affected the transport and the related resistance switching characteristics of the junctions.

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ER -

Electrode-dependent electrical properties of metal/Nb-doped SrTi O3 junctions

Abstract

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