Electrode-dependent electrical properties of metal/Nb-doped SrTi O3 junctions

C. Park, Y. Seo, J. Jung, D. W. Kim

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In this study, we discuss the electrical properties of junctions consisting of metal electrodes and Nb-doped SrTi O3 (001) single crystals. The junctions formed with large work function metals (Ni, Au, Pd, and Pt) resulted in rectifying transport. A hysteretic feature was observed in the current (I) -voltage (V) and capacitance (C) -V characteristics of these junctions upon polarity reversal. The ideal Schottky-Mott rule could not explain the barrier height obtained from the I-V data, indicating the existence of interface states. Analyses of the C-V data revealed that a low dielectric constant layer existed at the interface. The interface states and layers affected the transport and the related resistance switching characteristics of the junctions.

Original languageEnglish
Article number054106
JournalJournal of Applied Physics
Issue number5
StatePublished - 2008

Bibliographical note

Funding Information:
This work was supported by the Korea Research Foundation Grant funded by the Korean Government (MOEHRD) (KRF-2007-331-C00083).


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