Electrochemical fabrication of (TMTSF) ₂ X(X = PF ₆, BF ₄, ClO ₄) nanowires

TMTSF-based (TMTSF = tetramethyltetraselenafulvalene = C ₁₀H ₁₂Se ₄) charge-transfer salt nanowires were fabricated using the galvanostatic deposition technique that was assisted by an anodic aluminum oxide (AAO) template. By applying a low current density of 1-2 μA/cm ² for more than one month, nanowire arrays with diameters of ∼150 nm and lengths of ∼6 μm were obtained. The length of nanowires can be controlled by the duration of the constant current application. Energydispersive X-ray spectroscopic (EDX) analysis con?rmed that selenium is one of the main components of the nanowires. The micro-Raman (v ₃C = C) and FT-IR spectra (v ₃ PF ₆ ^- indicated that the nanowire arrays had the (TMTSF) ₂ X (X = PF ₆, BF ₄, ClO ₄) phase. The TEM images and the selected area electron diffraction (SAED) patterns indicate that the nanowires were not single crystals, but the current-voltage characteristic that was measured with the four-terminal method showed the conductivity of the (TMTSF) ₂ PF ₆single crystals (ω _RT= 1.6 S/cm) at room temperature.